Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique

Date

2021-11-15

Author

Peksu, Elif
Terlemezoglu, Makbule
PARLAK, MEHMET
Karaağaç, Hakan

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To date, although a number of studies have focused on understanding the fundamental properties of Cu-poor/Zn-rich Cu2ZnSnS4 (CZTS) single crystals, little attention has been paid to investigate the physical properties of those with a Cu-rich / Zn-poor chemical composition. Therefore, in this study, the structural and electrical properties of Cu-rich/Zn-poor CZTS single crystal grown by the Bridgman technique have been studied in order to fill this gap in literature. XRD and Raman findings confirm the growth of CZTS single crystal having a kesterite phase without secondary phases. Hall and temperature dependent conductivity measurements reveal the presence of VCu and CuZn antisite point defects in CZTS during the growth stage with thermal activation energies of 15 meV and ∼100 meV, respectively. Hall mobility, resistivity and hole carrier concentration values at room temperature were found to be 1.2 cm2/V.s, 16.2 Ω.cm and 3.1 × 1017 cm−3, respectively.

Subject Keywords

Single crystal, Cu2ZnSnS4, Solar cell, Conductivity

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85115036020&origin=inward
https://hdl.handle.net/11511/93297

Journal

Journal of Crystal Growth

DOI

https://doi.org/10.1016/j.jcrysgro.2021.126336

Collections

Department of Physics, Article

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Citation Formats

E. Peksu, M. Terlemezoglu, M. PARLAK, and H. Karaağaç, “Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique,” Journal of Crystal Growth, vol. 574, pp. 0–0, 2021, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85115036020&origin=inward.