Crosstalk Analysis for Mesa-based In-device Passivated InGaAs Photodetectors

Date

2022-01-01

Author

Çırçır, Kübra
Kocaman, Serdar

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Electrical crosstalk of in-device passivated mesa-based InGaAs photodetectors has been analyzed by a three-pixel mini array illuminated from the backside. In-device passivation of mesa-based lattice-matched InGaAs photodetectors significantly suppresses the surface-related component of dark current-however, inter-pixel crosstalk increases due to the depletion condition of the in-device passivation layer between the pixels. The inter-pixel crosstalk originates mainly from the high electric field in the in-device passivation layer. Here, in mesa-based in-device passivated InGaAs photodetectors, inter-pixel crosstalk has been significantly improved by adjusting the electric field distribution between the pixels with the inclusion of a thin n-InP crosstalk-block layer without affecting the primary purpose of the detector structure, which is strong resistivity to surface-related dark current increase.

Subject Keywords

Short Wavelength Infrared, InGaAs/InP, mesa type, in-device passivation, dark current reduction, inter-pixel crosstalk suppression, DESIGN, LAYER

URI

https://hdl.handle.net/11511/99080

DOI

https://doi.org/10.1117/12.2609730

Conference Name

Conference on Optical Components and Materials XIX at SPIE OPTO Conference

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

K. Çırçır and S. Kocaman, “Crosstalk Analysis for Mesa-based In-device Passivated InGaAs Photodetectors,” ELECTR NETWORK, 2022, vol. 11997, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/99080.