Crosstalk Analysis for Mesa-based In-device Passivated InGaAs Photodetectors

Electrical crosstalk of in-device passivated mesa-based InGaAs photodetectors has been analyzed by a three-pixel mini array illuminated from the backside. In-device passivation of mesa-based lattice-matched InGaAs photodetectors significantly suppresses the surface-related component of dark current-however, inter-pixel crosstalk increases due to the depletion condition of the in-device passivation layer between the pixels. The inter-pixel crosstalk originates mainly from the high electric field in the in-device passivation layer. Here, in mesa-based in-device passivated InGaAs photodetectors, inter-pixel crosstalk has been significantly improved by adjusting the electric field distribution between the pixels with the inclusion of a thin n-InP crosstalk-block layer without affecting the primary purpose of the detector structure, which is strong resistivity to surface-related dark current increase.
Conference on Optical Components and Materials XIX at SPIE OPTO Conference


Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors
Çırçır, Kübra; Kocaman, Serdar (2022-12-01)
Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs photodetectors provides a lower dark current than the conventional mesa type structures. However, due to the high electric field in the passivation layer between the pixels, improved dark current characteristics come with increased electrical crosstalk. Manipulating the electrical field distribution with an additional thin epilayer promises to reduce this inter-pixel carrier collection without disturbing the primary aim of the ...
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Citation Formats
K. Çırçır and S. Kocaman, “Crosstalk Analysis for Mesa-based In-device Passivated InGaAs Photodetectors,” ELECTR NETWORK, 2022, vol. 11997, Accessed: 00, 2022. [Online]. Available: