Investigation on ionicity and its effect on charge carrier selectivity for n-type crystalline silicon solar cells

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MSc Thesis Basil Mohamed Mahmoud Eldeeb.pdf

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2022-8-31

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Eldeeb, Basil Mohamed Mahmoud

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Optoelectronic device performance is not exactly governed by the band alignment between two materials. Interfacial layers in combination with a metal cap dictate charge-carrier selectivity and hence semiconductor device performance. Considering the investigations done on a wide array of solid-state surfaces and heterojunctions done both experimentally and theoretically, it is found that the electron localizability, which is quantifiable through the bandgap energy and band width, plays an integral role in the degree of obeying the Schottky-Mott rule and hence the optoelectronic properties of interfaces. By proposing and utilizing novel ionic crystals (NaF and NaCl) as ultrathin interfacial layers between Aluminum and n-type silicon, we demonstrate Fermi-level unpinning and show contacts having an effect similar to that of heavily doping the surface of silicon. We managed to achieve 17.3% efficiency for NaF with suboptimal passivation. For planar interfaces, a strategy for contacts is proposed for enhancing electron transport across boundaries.

Subject Keywords

ionicity, charge carrier selectivity, Schottky Barrier, Quantum Tunnelling

URI

https://hdl.handle.net/11511/99756

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Graduate School of Natural and Applied Sciences, Thesis

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Citation Formats

B. M. M. Eldeeb, “Investigation on ionicity and its effect on charge carrier selectivity for n-type crystalline silicon solar cells,” M.S. - Master of Science, Middle East Technical University, 2022.