The growth and characterization of galium selenide thin films

Çolakoğlu, Tahir


Investigation of material properties of magnetron sputtered CuAg-In-Se thin films
Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2016-09-23)
Thin films of copper based chalcopyrite absorber materials are attracting the attention of many researchers because of their favorable optoelectronic properties and good stability makes them suitable for photovoltaic and optoelectronic device applications. These compounds are particularly suitable for making p-n hetero-junctions with the II-VI compounds. Therefore, the utilization of I-III-VI2 group of chalcopyrite semiconductors has been reported in the literature for application in thin film solar cells. ...
The effect of microporous vanadosilicate AM-6 thin films as photocatalysts for the degradation of methylene blue
Kuzyaka, Duygu; Galioglu, Sezin; ALTIN, İLKNUR; Sokmen, Munevver; Akata Kurç, Burcu (2018-11-01)
In the current study, a new photocatalyst in thin film form exhibiting photocatalytic activity under visible light range was introduced. For that purpose, microporous vanadosilicate (AM-6, (Na,K)(2)VSi5O13) and silver nanoparticle (Ag-0) incorporated vanadosilicate AM-6 thin films were investigated as photocatalysts for the photocatalytic decomposition of methylene blue (MB). To create different oxidation states of vanadium cation present in the center dot center dot center dot V-o-V-o-V center dot center d...
Mechanism and characterization studies on boron carbides deposited by chemical vapor deposition technique
Karaman, Mustafa; Özbelge, Hilmi Önder; Sezgi, Naime Aslı; Doğu, Timur (2005-12-02)
Boron carbide was produced in an impinging jet CVD reactor from a gas mixture of BCl3, CH4 and H-2. The mass transfer limitations on the reaction kinetics were minimised by the jet impingement on the substrate surface. XPS characterization of the produced deposits revealed a nearly pure boron carbide phase containing small amounts of oxy-boron and oxy-carbon species. After a detailed kinetic study, a reaction model was proposed to predict the rates of boron carbide and dichloroborane formation reactions. In...
Preparation and characterization of silicon thin films
Atılgan, İsmail; Katırcıoğlu, Bayram; Department of Physics (1993)
The Effect of Thickness and Doping on the Nonlinear Absorption Behaviour of IIIA-VIA Group Amorphous Semiconductor Thin Films
Kurum, Ulas; YAĞLIOĞLU, HALİME GÜL; YÜKSEK, MUSTAFA; ELMALI, Ayhan; Ates, Aytunc; KARABULUT, MEVLÜT; Mamedov, Gasan M.; Hasanlı, Nızamı (2011-06-30)
The nonlinear optical absorption of InSe, GaSe and GaxIn1-xSe amorphous films with varying thickness and doping has been studied by open-aperture Z-scan experiment with 4 ns and 65 ps pulse durations at 1064 nm wavelength and femtosecond pump-probe spectroscopy. Our results show that the dopant and film thickness (from 20 nm to 104 nm) results in switching from saturable absorption to nonlinear absorption for equal input intensities. This behaviour is attributed to increasing localized defect states with in...
Citation Formats
T. Çolakoğlu, “The growth and characterization of galium selenide thin films,” M.S. - Master of Science, Middle East Technical University, 2003.