Dynamic ion behavior in plasma source ion implantation

Bozkurt, Bilge
The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-electrode space. After a short time, the ion matrix sheath starts moving towards the cathode and disappears there. Two regions are formed as the matrix sheath evolves. The potential profiles of these two regions are derived and the ion flux on the cathode is estimated. Then, by us-ing the finite-differences method, the problem is simulated numerically. It has been seen that the results of both analytical calculations and numerical simula-tions are in a good agreement.


Development of atomic force microscopy system and kelvin probe microscopy system for use in semiconductor nanocrystal characterization
Bostancı, Umut; Turan, Raşit; Department of Physics (2007)
Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different g...
Deep-trench RIE optimization for high performance MEMS microsensors
Aydemir, Akın; Turan, Raşit; Department of Physics (2007)
This thesis presents the optimization of deep reactive ion etching process (DRIE) to achieve high precision 3-dimensional integrated micro electro mechanical systems (MEMS) sensors with high aspect ratio structures. Two optimization processes have been performed to achieve 20 μm depth for 1 μm opening for a dissolved wafer process (DWP) and to achieve 100 μm depth for 1 μm opening for silicon-on-glass (SOG) process. A number of parameters affecting the etch rate and profile angle are investigated, including...
Formation of semiconductor nanocrystals in sio2 by ion implantation
Serincan, Uğur; Turan, Raşit; Department of Physics (2004)
In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, anneal...
Development of software for calculations of the reflectance, transmittance and absorptance of multilayered thin films
Şimşek, Yusuf; Esendemir, Akif; Department of Physics (2008)
The aim of this study is to develop a software which calculates reflection, transmission and absorption of multilayered thin films by using complex indices of refraction, as a function of both wavelength and thickness. For these calculations matrix methods will be considered and this software is programmed with the matrix method. Outputs of the program will be compared with the theoretical and experimental results studied in the scientific papers.
Optical properties of silicon based amorphous thin films
Akaoğlu, Barış; Katırcıoğlu, Bayram; Department of Physics (2004)
Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distribu...
Citation Formats
B. Bozkurt, “Dynamic ion behavior in plasma source ion implantation,” M.S. - Master of Science, Middle East Technical University, 2006.