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Electrical transport in metal oxide semiconductor capacitors
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Date
2004
Author
Arıkan, Mustafa
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The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Subject Keywords
Electronics.
URI
http://etd.lib.metu.edu.tr/upload/12605489/index.pdf
https://hdl.handle.net/11511/14361
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Graduate School of Natural and Applied Sciences, Thesis
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M. Arıkan, “Electrical transport in metal oxide semiconductor capacitors,” M.S. - Master of Science, Middle East Technical University, 2004.
