Electrical transport in metal oxide semiconductor capacitors

Arıkan, Mustafa
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.


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Citation Formats
M. Arıkan, “Electrical transport in metal oxide semiconductor capacitors,” M.S. - Master of Science, Middle East Technical University, 2004.