Electrical transport in metal oxide semiconductor capacitors

Arıkan, Mustafa
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Citation Formats
M. Arıkan, “Electrical transport in metal oxide semiconductor capacitors,” M.S. - Master of Science, 2004.