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Thermally stimulated current observation of trapping centers in layered thallium dichalcogenide semiconductors
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Date
2004
Author
Yüksek, Nuh Sadi
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Thermally stimulated current measurements are carried out on as-grown TlGaS2, TlGaSe2 and TlInS2 layered single crystals with the current owing perpendiclar to the c-axis in the wide temperature range of 10-300 K with various heating rates. Experimental evidence is found for the presence of three, two and one trapping centers for TlGaS2 , TlGaSe2 and TlInS2 crystals with activation energies 6, 12 and 26; 98 and 130; 12 meV respectively. We have determined the trap parameters using varous methods of analyis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by good agreement between the experimental results and theoretical predictions of the model that assumes slow retrapping. Also the calculated values of the capture cross sections, attempt to escape frequencies and the concentration of the traps are reported.
Subject Keywords
Technique.
,
Instructions for Observers.
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http://etd.lib.metu.edu.tr/upload/12605303/index.pdf
https://hdl.handle.net/11511/14457
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Graduate School of Natural and Applied Sciences, Thesis
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DETERMINATION OF TRAPPING CENTER PARAMETERS OF Tl2Ga2S3Se LAYERED CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS
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We have carried out thermally stimulated current (TSC) measurements on as-grown Tl2Ga2S3Se layered single crystals in the temperature range 10-60 K with different heating rates of 0.6-1.5 K s(1). The data were analyzed by curve fitting, initial rise, and peak shape methods. The results were in good agreement with each other. Experimental evidence was obtained for trapping center in Tl2Ga2S3Se crystal with activation energy of 11 meV. The capture cross section and concentration of the traps were found to be ...
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N. S. Yüksek, “Thermally stimulated current observation of trapping centers in layered thallium dichalcogenide semiconductors,” M.S. - Master of Science, Middle East Technical University, 2004.
