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Thermally stimulated current observation of trapping centers in layered thallium dichalcogenide semiconductors

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2004
Yüksek, Nuh Sadi
Thermally stimulated current measurements are carried out on as-grown TlGaS2, TlGaSe2 and TlInS2 layered single crystals with the current owing perpendiclar to the c-axis in the wide temperature range of 10-300 K with various heating rates. Experimental evidence is found for the presence of three, two and one trapping centers for TlGaS2 , TlGaSe2 and TlInS2 crystals with activation energies 6, 12 and 26; 98 and 130; 12 meV respectively. We have determined the trap parameters using varous methods of analyis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by good agreement between the experimental results and theoretical predictions of the model that assumes slow retrapping. Also the calculated values of the capture cross sections, attempt to escape frequencies and the concentration of the traps are reported.