Optical properties of silicon based amorphous thin films

Download
index.pdf
2004
Akaoğlu, Barış
Show full item record
40
views
24
downloads
Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distributed square well like potential fluctuations of localized states. Urbach constant EU and the slope B are deduced as disorder parameters. Both intensity sensitive transmittance and reflectance, and amplitude/phase sensitive ellipsometric techniques for multilayer thin films are theoretically and practically treated. Various methodologies are developed for the determination of thickness, refractive index and absorption coefficient of the films. A reflectance unit is adapted to the spectrometer and all the measuring instruments are computerized and relevant software packets have been developed. IR spectroscopy has been used for determination of mainly hydrogen concentrations and bonding properties. Establishing the أproduction-characterization-improved growth conditionsؤ cycle successfully, the following results are obtained: (a) determination of lateral inhomogeneity of films along the radial direction of the plasma reactor, (b) determination of vertical inhomogeneity due to both substrate and air ambient, (c) perfect adjustment of refractive index and band gap of a-Si1-xCx:H films by changing carbon content of the films, (d) effect of plasma power density on both growth and carbon content.
Physics.
http://etd.lib.metu.edu.tr/upload/12605492/index.pdf
https://hdl.handle.net/11511/14552
Graduate School of Natural and Applied Sciences, Thesis

Suggestions

Silicon nanocrystals embedded in sio2 for light emitting diode (led) applications
Kulakçı, Mustafa; Turan, Raşit; Department of Physics (2005)
In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement ...
Development of atomic force microscopy system and kelvin probe microscopy system for use in semiconductor nanocrystal characterization
Bostancı, Umut; Turan, Raşit; Department of Physics (2007)
Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different g...
Dynamic ion behavior in plasma source ion implantation
Bozkurt, Bilge; Bilikmen, Kadri Sinan; Department of Physics (2006)
The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-ele...
Dispersive optical constants of Tl2InGaSe4 single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-09-01)
The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band ...
Theoretical investigation and design for x-ray lasers and their lithographic application
Demir, Pınar; Bilikmen, Kadri Sinan; Department of Physics (2008)
Grazing incidence pumping (GRIP) is a scheme to produce x-ray lasers and extreme ultraviolet lithography is a means of lithographic production which requires soft x-rays with a bandwidth of 2% centred at 13,5 nm. In this work firstly a grazing incidence pumping of Ni-like Mo and Ne-like Ti x-ray laser media were simulated by using EHYBRID and a post-processor code coupled to it. The required atomic data were obtained from the Cowan code. Besides, the timing issue needed for amplification purpose in a Ti:Sap...
Citation Formats
B. Akaoğlu, “Optical properties of silicon based amorphous thin films,” Ph.D. - Doctoral Program, Middle East Technical University, 2004.
METU IIS - Integrated Information Service open@metu.edu.tr