Investigation of inse thin film based devices

Yılmaz, Koray
In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (?.cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts


Characterization of cds thin films and schottky barrier diodes
Korkmaz, Sibel; Erçelebi, Ayşe Çiğdem; Department of Physics (2005)
CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping. As a result of the structural and electrical investigation it was found that CdS thin films were of the polycrystalline structure and n-type; and of the transmission analysis optical band gap was found to be around 2.4 eV. Temperature dependent conductivity measurements were carried out in the range of 180 K ا 400 K. The dominant conduction mechanism is identified as tunnelling between 180 K ا 230 K and the...
Growth and characterization of InSe single crystals
Deniz, Derya; Akınoğlu, Bülent Gültekin; Department of Physics (2004)
In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the elect...
Structural characterization of Zn-In-Se thin films
Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2017-02-20)
In this study, structural properties of the Zn In Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction. The compositional analysis of the films showed that they were in Zn-rich behavior and there was a slight change in the elemental contribution to the structure with annealing process. Raman analysis was carried out to determine the crystalline structure and the ...
Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (IOP Publishing, 2020-07-01)
Structural and optical properties of ZnSe thin films grown by electron-beam evaporation technique were reported in the present paper. X-ray diffraction pattern exhibited a single peak around 27 degrees which is well-suited with cubic phase of the films. Energy dispersive X-ray spectroscopy analyses resulted in atomic composition ratio of Zn/Se nearly 1.0 which corresponds to the chemical formula of ZnSe. Transmission experiments were performed at various temperatures in between 10 and 300 K. The analyses of...
Development of software for calculations of the reflectance, transmittance and absorptance of multilayered thin films
Şimşek, Yusuf; Esendemir, Akif; Department of Physics (2008)
The aim of this study is to develop a software which calculates reflection, transmission and absorption of multilayered thin films by using complex indices of refraction, as a function of both wavelength and thickness. For these calculations matrix methods will be considered and this software is programmed with the matrix method. Outputs of the program will be compared with the theoretical and experimental results studied in the scientific papers.
Citation Formats
K. Yılmaz, “Investigation of inse thin film based devices,” Ph.D. - Doctoral Program, Middle East Technical University, 2004.