Characterization of cds thin films and schottky barrier diodes

Korkmaz, Sibel
CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping. As a result of the structural and electrical investigation it was found that CdS thin films were of the polycrystalline structure and n-type; and of the transmission analysis optical band gap was found to be around 2.4 eV. Temperature dependent conductivity measurements were carried out in the range of 180 K ا 400 K. The dominant conduction mechanism is identified as tunnelling between 180 K ا 230 K and thermionic emission between 270 K and 400 K. To produce Schottky devices, CdS thin films were deposited onto the tin-oxide and indium-tin-oxide coated glasses, by the same method. Gold, platinum, carbon and gold paste were used as metal front contact in these devices. The area of these contacts were about...... Temperature dependent current-voltage measurements between 200 K and 350 K, room temperature current-voltage measurements, capacitance-voltage measurement in the frequency range 1 kHz ا 1 MHz and photoresponse measurements were carried out for the characterization of these diodes. Ideality factor of the produced Schottky devices were found to be at least 1.5, at room temperature. Dominant current transport mechanism in the diodes with gold contacts was determined to be tunnelling from the temperature dependent current voltage analysis. Donor concentration was calculated to be about ........ from the voltage dependent capacitance measurement.


Investigation of inse thin film based devices
Yılmaz, Koray; Parlak, Mehmet; Department of Physics (2004)
In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined t...
Growth and characterization of InSe single crystals
Deniz, Derya; Akınoğlu, Bülent Gültekin; Department of Physics (2004)
In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the elect...
Structural characterization of Zn-In-Se thin films
Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2017-02-20)
In this study, structural properties of the Zn In Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction. The compositional analysis of the films showed that they were in Zn-rich behavior and there was a slight change in the elemental contribution to the structure with annealing process. Raman analysis was carried out to determine the crystalline structure and the ...
Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (IOP Publishing, 2020-07-01)
Structural and optical properties of ZnSe thin films grown by electron-beam evaporation technique were reported in the present paper. X-ray diffraction pattern exhibited a single peak around 27 degrees which is well-suited with cubic phase of the films. Energy dispersive X-ray spectroscopy analyses resulted in atomic composition ratio of Zn/Se nearly 1.0 which corresponds to the chemical formula of ZnSe. Transmission experiments were performed at various temperatures in between 10 and 300 K. The analyses of...
Anisotropic behaviors in polycrystalline Cd-doped GaSe thin films
Colakoglu, T.; Parlak, Mehmet (Springer Science and Business Media LLC, 2006-12-01)
GaSe thin films were deposited by thermal evaporation technique with Cd doping. X-ray diffraction analysis showed that Cd-doped films have polycrystalline structure with the preferred orientation along ( 008) direction. Temperature dependent electrical conductivity measurements were carried out in the temperature range of 100 - 400 K along perpendicular and parallel directions to the growth direction for the films exhibiting p-type conduction determined by hot probe technique. The room temperature conductiv...
Citation Formats
S. Korkmaz, “Characterization of cds thin films and schottky barrier diodes,” M.S. - Master of Science, Middle East Technical University, 2005.