Physical properties of CdSe thin films produced by thermal evaporation and e-beam techniques

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2006
Huş, Şaban Mustafa
CdSe thin films were deposited by thermal evaporation and e-beam evaporation techniques on to well cleaned glass substrates. Low dose of boron have been implanted on a group of samples. EDAX and X-ray patterns revealed that almost stoichiometric polycrystalline films have been deposited in (002) preferred orientation. An analysis of optical measurements revealed a sharp increase in absorption coefficient below 700 nm and existence of a direct allowed transition. The calculated band gap was around 1.7 eV. The room temperature conductivity values of the samples were found to be between 9.4 and 7.5x10-4 (Ω-cm)-1 and 1.6x10-6 and 5.7x10-7 (Ω-cm)-1for the thermally evaporated and e-beam evaporated samples respectively. After B implantation conductivity of these films increased 5 and 8 times respectively. Hall mobility measurements could be performed only on the thermally evaporated and B-implanted e-beam evaporated samples and found to be between 8.8 and 86.8 (cm2/V.s). The dominant conduction mechanism were determined to be thermionic emission above 250 K for all samples. Tunneling and v variable range hopping mechanisms have been observed between 150-240 K and 80- 140 K respectively. Photoconductivity illumination intensity plots indicated two recombination centers dominating at the low and high regions of studied temperature range of 80-400 K. Photoresponse measurements have corrected optical band gap measurements by giving peak value at 1.72 eV.

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Citation Formats
Ş. M. Huş, “Physical properties of CdSe thin films produced by thermal evaporation and e-beam techniques,” M.S. - Master of Science, Middle East Technical University, 2006.