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Thermally stimulated current study of traps distribution in TiGaSeS layered single crystals

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2010
Nasser, Hisham
Trapping centres and their distributions in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current (TSC) measurements. The investigations were performed in the temperature range of 10–160 K with various heating rates between 0.6–1.2 K/s. Experimental evidence has been found for the presence of three electrons trapping centres with activation energies 12, 20, and 49 meV and one hole trapping centre located at 12 meV. Their capture cross-sections and concentrations were also determined. It is concluded that in these centres retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The optical properties of TlGaSeS layered single crystals have been investigated by measuring the transmission and the reflection in the wavelength region between 400 and 1100 nm. The optical indirect transitions with a band gap energy of 2.27 eV and direct transitions with a band gap energy of 2.58 eV were found by analyzing the absorption data at room temperature. The rate of change v of the indirect band gap with temperature was determined from the transmission measurements in the temperature range of 10–300 K. The oscillator and the dispersion energies, the oscillator strength, and the zero-frequency refractive index were also reported. The parameters of monoclinic unit cell and the chemical composition of TlGaSes crystals were found by X-ray powder diffraction and energy dispersive spectroscopic analysis, respectively.