Electronic properties of dye molecules adsorbed on anatase-titania surface for solar cell applications

Torun, Engin
Wide band gap metal oxides have recently become one of the most investigated materials in surface science. Among these metal oxides especially TiO2 attracts great interest, because of its wide range applications, low cost, biocompatibility and ease of analysis by all experimental techniques. The usage of TiO2 as a component in solar cell technology is one of the most investigated applications of TiO2 . The wide band gap of TiO2 renders it ine cient for isolated use in solar cells. TiO2 surface are therefore coated with a dye in order to increase e ciency. This type of solar cells are called dye sensitized solar cells . The e ciency of dye sensitized solar cells is directly related with the absorbed light portion of the entire solar spectrum by the dye molecule. Inspite of the early dyes, recent dye molcules, which are called wider wavelength response dye molecules, can absorb a larger portion of entire solar spectrum. Thus, the e ciency of dye sensitized solar cells is increased by a considerably amount. In this thesis the electronic structure of organic rings, which are the fundamental components of the dye molecules, adsorbed on anatase (001) surface is analyzed using density functionaltheory. The main goal is to obtain a trend in the electronic structure of the system as a function of increasing ring number. Electronic structure analysis is conducted through band structure and density of states calculations. Results are presented and discussed in the framework of dye sensitized solar cells theory.


Development of atomic force microscopy system and kelvin probe microscopy system for use in semiconductor nanocrystal characterization
Bostancı, Umut; Turan, Raşit; Department of Physics (2007)
Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different g...
Optical properties of silicon based amorphous thin films
Akaoğlu, Barış; Katırcıoğlu, Bayram; Department of Physics (2004)
Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distribu...
Design and production of antireflection coating for Ge, ZnSe and ZnS in 8-12 micrometer wavelength region
Üçer, Begüm; Parlak, Mehmet; Department of Physics (2009)
This thesis describes the works done during the design and deposition process of the antireflection coating for the materials commonly used as refractive optical elements in thermal imaging systems. These coatings are quite necessary to reduce reflection losses from the surface of the optics and stray light that directly affects the image quality. Germanium, zinc sulfide and zinc selenide were used as substrate material and their optical properties were investigated with infrared ellipsometry and FTIR. Anti...
Structural, electrical and optical characterization of ge-implanted gase single crystal grown by Bridgman Method
Karaağaç, Hazbullah; Akınoğlu, Bülent Gültekin; Department of Physics (2005)
In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with ...
Silicon nanocrystals embedded in sio2 for light emitting diode (led) applications
Kulakçı, Mustafa; Turan, Raşit; Department of Physics (2005)
In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement ...
Citation Formats
E. Torun, “Electronic properties of dye molecules adsorbed on anatase-titania surface for solar cell applications,” M.S. - Master of Science, Middle East Technical University, 2009.