Gallium arsenide/aluminum gallium arsenide double heterostructure laser diodes

Gezer, Cem


Gallium extraction and aggregation studies in some amine extraction systems.
Başol, Sacit; Baysal, Bahattin; Department of Chemistry (1968)
Gallium and thallium NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2
Panich, AM; Ailion, DC; Kashida, S; Hasanlı, Nızamı (American Physical Society (APS), 2004-06-01)
We report on the first NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2. Ga-69,Ga-71 and Tl-205 NMR data from a powder sample show phase transitions at 118, 108 and around 69 K. The Ga-69 and Ga-71 spin-lattice relaxation times T-1 are short and nearly temperature independent in the temperature range 118 to 108 K, which is characteristic of an incommensurate state. The nuclear magnetization recovery in this temperature range can be fit by two components having diffe...
Germanium nanowire synthesis using solid precursors
AKSOY, Burcu; Kalay, Yunus Eren; Ünalan, Hüsnü Emrah (2014-04-15)
We report on the synthesis of single crystalline, high aspect ratio germanium (Ge) nanowires (NWs) by vapor transport method using three different solid powder precursors. Investigated precursors were either powder like germanium or powder mixtures like germanium dioxide with carbon and germanium iodide with germanium. As-grown NWs were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-Ray diffraction (XRD) and X-Ray photoelectron spectroscopy (XPS) to obtain struc...
Germanium extraction from copper cake
Kul, Mehmet; Topkaya, Yavuz A.; Department of Metallurgical and Materials Engineering (1997)
Germanium solar cells prepared by ion implantation
Kabacelik, Ismail; Turan, Raşit (2013-09-01)
Development of Ge solar cells for multijunction solar cells, where the p-n junction is formed by ion implantation is investigated. Ge samples are doped by phosphorus (P) ions having 60 keV energy at dose ratios of 1x10(13), 1x10(14), 1x10(16) ve 1x10(16) ions/cm(2) at room temperature. The influences of P concentration and activation temperature on Ge solar cells is investigated. P concentration and layer resistance are measured by secondary ion mass spectrometry (SIMS) and a 4-point probe, respectively. La...
Citation Formats
C. Gezer, “Gallium arsenide/aluminum gallium arsenide double heterostructure laser diodes,” Middle East Technical University, 1999.