Growth and characterization of indium rich indium-gallium-nitride solar cell epitaxial structures by metal organic chemical vapor deposition

Download
2012
Çakmak, Hüseyin
The purpose of this study is to develop a technology for indium (In) rich indium gallium nitride (InGaN) solar cell epitaxial structures through metal organic chemical vapor deposition (MOCVD) method. InxGa1-xN solar cell structures have potential to cover 90% of the solar spectrum by varying In composition in the active region of the solar cell, where bandgaps of indium nitride (InN) and gallium nitride (GaN) are 0.7 eV and 3.4 eV, respectively. Photovoltaic devices that have a bandgap larger than 2.0 eV gather great interest since half of the available photons in the solar spectrum belongs there. However, only limited success has been achieved to increase the amount of In incorporation into InGaN epitaxial structures. This thesis is focused on the epitaxial growth of In rich InGaN epitaxial structures. These InGaN structures were grown on double side polished (DSP) c-plane sapphire substrates using MOCVD and then utilized for solar cells. Solar cell device characterizations were carried out after standart microfabrication procedures. X-Ray diffraction (XRD), Hall-Effect Measurements and absorption measurements have been done to investigate material properties first. Afterwards then the current voltage (I-V) characterizations were performed to investigate solar cell device performance. XRD measurements revealed that both GaN and InGaN epitaxial structures have high crystal quality, where full width at half maximum (FWHM) values of around 300 arcsec and 400 arsec for GaN and InGaN epilayers were obtained, respectively. In content was found to increase light absorption. Highest photovoltaic conversion of 0.66% was achieved for In0,16GaN films under a standard solar simulator with one-sun air mass (AM) 1.5 global light source ( 100mW/cm2) at room temperature. The solar simulator was calibrated with a standard solar cell before measurements. There is a increase on light absorption with increasing indium content in epitaxial structures. The best efficiency that was reached is 0.66% under air mass (AM) 1.5 global light source.

Suggestions

Synthesis and Characterization of Aluminum Containing Silica Aerogel Catalysts for Degradation of PLA
Sivri, Seda; Dilek Hacıhabiboğlu, Çerağ; Sezgi, Naime Aslı (Walter de Gruyter GmbH, 2019-05-01)
Aluminum loaded silica aerogel based catalysts were synthesized by impregnation of aluminum into silica aerogel produced using sol-gel method in different aluminum loadings (2.5-15 wt%) to investigate their performances in degradation of polylactic acid (PLA).
Modification of TiO2 and NiO charge selective mesoporous layers using excessive Y and Li additions for carbon based perovskite solar cells
Icli, Kerem Cagatay; Özenbaş, Ahmet Macit (2021-09-15)
Carbon based perovskite solar cells are rapidly emerging as promising photovoltaic devices, combining low cost production and prolonged device operation, due to the exclusion of polymeric conductors and integration of highly durable metal oxide charge selective layers. Modification of metal oxide mesoporous layers via element additions and enhancement of electrical conductivity is a major strategy for reduced internal resistances inside the cell. This work investigates the effect of excessive Y and Li addit...
Growth of branched gold nanoparticles on solid surfaces and their use as surface-enhanced Raman scattering substrates
Nalbant Esentürk, Emren; Coskun, S.; Kozanoglu, D.; Ertaş, Gülay; Ünalan, Hüsnü Emrah; Nalbant Esentürk, Emren (2015-01-01)
Branched gold (Au) nanoparticles (NPs) were synthesized directly on surfaces of three different supports (silicon, glass, indium tin oxide (ITO)) by following a "seed-mediated" method. Growth of the nanostructures in high yield and all with branched morphology was achieved on all surfaces. Nanostructures with desired characteristics were synthesized by determining the optimum seed size (8 nm Au nanospheres) and pH (3.00) of the growth solution. The Au NPs synthesized under these conditions have branched mor...
Chemical Interactions of Nano Islandic Graphene Grown on Titanium Dioxide Substrates by Chemical Vapor Deposition
Karamat, S.; Khalique, U.; Usman, Arslan; Javaid, Asad; Oral, Ahmet (2022-03-01)
In this work, direct growth of graphene is carried out on TiO2 (110) substrates by chemical vapor deposition. For few device applications, it is convenient to grow graphene directly on the dielectric substrates rather than metal foil to minimize transfer and surface interface defects. Raman spectrum support graphene growth on TiO2 substrate by exhibiting D and G peaks. Graphene covered the whole TiO2 substrate with few areas where higher growth of carbon atoms occurs. The contrast of SEM images clearly show...
Growth of nano-graphene on SrTiO3 (110) substrates by chemical vapour deposition
KARAMAT, SHUMAİLA; Celik, K.; Oral, Ahmet (2017-10-01)
Transfer of graphene from metal catalyst to dielectrics is a complicated procedure which affects the quality of graphene. In the present work, direct growth of graphene was established on strontium titanate (SrTiO3) substrates with the means of chemical vapour deposition (CVD). The graphene growth on catalyst free dielectric substrates were carried out for 3, 4 and 7 h at 1000 degrees C. Raman spectrum showed D, G and 2D peaks of graphene for the samples. Scanning electron microscope (SEM) was used to get a...
Citation Formats
H. Çakmak, “Growth and characterization of indium rich indium-gallium-nitride solar cell epitaxial structures by metal organic chemical vapor deposition,” M.S. - Master of Science, Middle East Technical University, 2012.