Low temperature thermoluminescence study of some ternary and quaternary layered structured semiconductors

Download
2016
Delice, Serdar
Thermoluminescence (TL) experiments for ternary and quaternary layered single crystals were carried out in 10−300 K temperature range by employing various heating rates between 0.2 and 1.2 K/s. The TL emissions coming from the trapping centers in the studied samples brought out the TL spectra exhibiting peaks at different temperature regions for each crystals. These peaks were taken under consideration to reveal the TL properties of the associated trap levels. Characterizations of defect centers existing in the crystals were achieved utilizing the best-known analysis methods (curve fitting, initial rise, peak shape and heating rate methods) of TL theory. Thermal activation energies, capture cross sections and frequency factors of trapping levels were calculated with used TL analysis methods. Corrections due to temperature lag effect were taken into account for some of the studied crystals to evaluate the activation energy using heating rate method. Order of kinetics exhibited by trap levels were determined through curve fitting and peak shape methods. TL mechanisms of the trap centers in the crystals were studied in depth by investigating the behaviors against different heating rates and stopping temperatures. Although most of the trap levels in the crystals showed the normal heating rate behavior, the traps in Tl2GaInS4 and GaS crystals exhibited the properties of anomalous heating rate behavior. Also, thermal quenching was observed for the Tl2Ga2S3Se crystal. In addition, except for the Tl4In3GaS8 and GaSe:Mn crystals, which possess the continuous distribution of traps and single trap level, respectively, the quasi-continuous distributions of the trapping levels were exhibited in other studied crystals.

Suggestions

Low temperature thermoluminescence behaviour of Y2O3 nanoparticles
Delice, S.; IŞIK, MEHMET; Hasanlı, Nızamı (2019-01-01)
Y2O3 nanoparticles were investigated using low temperature thermoluminescence (TL) experiments. TL glow curve recorded at constant heating rate of 0.4 K/s exhibits seven peaks around 19, 62, 91, 115, 162, 196 and 215 K. Activation energies and characteristics of traps responsible for observed curves were revealed under the light of results of initial rise analyses and T-max-T-stop experimental methods. Analyses of TL curves obtained at different stopping temperatures resulted in presence of one quasi-contin...
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
Hasanlı, Nızamı; Bek, Alpan; Yılmaz, İsmail Ömer (Elsevier BV, 1998-1)
Photoluminescence (PL) spectra of TlGa& layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 X 10e2 to 9 W cm-‘. The A- and B-bands were found to be due to radiative transitions...
LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS
ALLAKHVERDIEV, KR; Hasanlı, Nızamı; AYDINLI, A (1995-06-01)
Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.
Low-Temperature Thermo luminescence Studies on TlInS2 Layered Single Crystals
Isik, M.; Delice, S.; Hasanlı, Nızamı (2014-12-01)
Thermoluminescence characteristics of TlInS2 layered single crystals grown by the Bridgman method were investigated in the low temperature range of 10-300 K. The illuminated sample with blue light (approximate to 470 nm) at 10 K was heated at constant heating rate. Curve fitting, initial rise and various heating rate methods were used to determine the activation energy of the trap levels. All applied methods showed good consistency about the presence of five trapping centers located at 14, 19, 350, 420, and...
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
Aydinli, A; Hasanlı, Nızamı; Goksen, K (2001-09-01)
Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T = 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10(-3) to 15.9 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative ...
Citation Formats
S. Delice, “Low temperature thermoluminescence study of some ternary and quaternary layered structured semiconductors,” Ph.D. - Doctoral Program, Middle East Technical University, 2016.