Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Download

index.pdf

Date

2001-09-01

Author

Aydinli, A
Hasanlı, Nızamı
Goksen, K

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

185
views

0
downloads

Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T = 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10(-3) to 15.9 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located at 0.029 and 0.040 eV below the bottom of the conduction band to deep acceptor levels located 0.185 and 0.356 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the PL spectra, respectively. A simple energy level diagram explaining the recombination process is proposed.

Subject Keywords

Chalcogenides, Semiconductors, Optical Properties, Luminescence

URI

https://hdl.handle.net/11511/38641

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/s0025-5408(01)00635-3

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Low-temperature photoluminescence spectra of InS single crystals Hasanlı, Nızamı (1997-03-01) Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions hom the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, r...
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2 Hasanlı, Nızamı; Bek, Alpan; Yılmaz, İsmail Ömer (Elsevier BV, 1998-1) Photoluminescence (PL) spectra of TlGa& layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 X 10e2 to 9 W cm-‘. The A- and B-bands were found to be due to radiative transitions...
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals Hasanlı, Nızamı (2013-01-15) Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...
LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS ALLAKHVERDIEV, KR; Hasanlı, Nızamı; AYDINLI, A (1995-06-01) Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.

Citation Formats

A. Aydinli, N. Hasanlı, and K. Goksen, “Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals,” MATERIALS RESEARCH BULLETIN, pp. 1823–1832, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38641.