Low-temperature photoluminescence spectra of layered semiconductor TlGaS2

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Date

1998-1

Author

Hasanlı, Nızamı
Bek, Alpan
Yılmaz, İsmail Ömer

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Photoluminescence (PL) spectra of TlGa& layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 X 10e2 to 9 W cm-‘. The A- and B-bands were found to be due to radiative transitions from the deep donor levels located at 0.362 and 0.738 eV below the bottom of the conduction band to the shallow acceptor levels at 0.005 and 0.085 eV located above the top of the valence band, respectively. The proposed energy-level diagram permits us to interpret the recombination processes in TlGa& layered single crystals.

Subject Keywords

Semiconductors, Optical properties, Luminescence

URI

https://hdl.handle.net/11511/28461

Journal

Solid State Communications

DOI

https://doi.org/10.1016/s0038-1098(97)10027-8

Collections

Department of Physics, Article

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LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS ALLAKHVERDIEV, KR; Hasanlı, Nızamı; AYDINLI, A (1995-06-01) Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.
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Citation Formats

N. Hasanlı, A. Bek, and İ. Ö. Yılmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Communications, pp. 21–24, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28461.