Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
High performance HgCdTe photodetector desings via dark current suppression
Download
index.pdf
Date
2018
Author
Özer, Yiğit
Metadata
Show full item record
Item Usage Stats
365
views
176
downloads
Cite This
This thesis work covers the numerical analysis and design of infrared photon detectors with a focus of HgCdTe based devices. An in-house numerical tool is utilized for the design and characterization process, where the Poisson, current and continuity equations are solved numerically with the high precision in electrical and optical properties. A high operating temperature alternative substrate mid-wave HgCdTe detector is designed benefiting from the generation-recombination dark current suppression. The advancement in the operating temperature is nearly 40 K (from ~85 K to ~125 K) for the designed device structure, which leads to diffusion limited dark current even for a very low carrier lifetimes (τSRH = 200 ns). The performance enhancement is achieved by the utilization of high Cd composition material at the depletion region targeting lower SRH recombination rates. The sensitivity of the designed structure to the fabrication errors is analyzed in terms of doping, composition and layer thickness. Moreover, a design methodology is introduced so that the inserted wide bandgap layer does not create valence band discontinuity that might lead to a noticeable decrease in quantum efficiency. In addition, a similar method is applied to SWIR window and performance of HgCdTe SWIR detectors has been shown to increase as well. The designed SWIR detector reached state-of-art sensors in terms of dark current density while benefiting from the reduced cost of alternative substrate detectors. With this enhancement, the designed HgCdTe sensors are capable of sensing based on solely nightglow radiation.
Subject Keywords
Photon detectors.
,
Infrared technology
URI
http://etd.lib.metu.edu.tr/upload/12622298/index.pdf
https://hdl.handle.net/11511/27389
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
High performance focal plane array technologies from short to long wavelength infrared bands
Arslan, Yetkin; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2014)
This thesis work covers the development of three different state of the art infrared sensor technologies: quantum well infrared photodetectors (QWIPs), HgCdTe sensors and extended InGaAs photodetectors. QWIP is the leading member of the quantum structure infrared photodetector family providing excellent uniformity and stability with field proven performance. The utilization of the InP/In0.48Ga0.52As multi-quantum well structure (instead of the standard AlGaAs/GaAs material system) for the implementation of ...
Low-cost uncooled infrared detector arrays in standard CMOS
Eminoglu, S; Tanrikulu, MY; Akın, Tayfun (2003-04-25)
This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...
A low-cost small pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process
Eminoglu, S; Tanrikulu, MY; Tezcan, DS; Akın, Tayfun (2002-04-03)
This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p(+)-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithog...
High-frequency CMUT arrays for high-resolution medical imaging
Oralkan, O; Hansen, ST; Bayram, Barış; Yaralioglu, GG; Ergun, AS; Khuri-Yakob, BT (2004-01-01)
This paper describes high-frequency I-D CMUT arrays designed and fabricated for use in electronically scanned high-resolution ultrasonic imaging systems. Two different designs of 64-element linear CMUT arrays are presented in this paper. A single element in each array is connected to a single-channel custom front-end integrated circuit for pulse-echo operation. The first design has a resonant frequency of 43 MHz in air, and operates at 30 MHz in immersion. The second design exhibits a resonant frequency of ...
Numerical modeling and optimization of HgCdTe infrared photodetectors for thermal imaging
Koçer, Hasan; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2011)
This thesis presents a detailed investigation of the performance limiting factors of long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) p on n HgCdTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. Numerical simulations under dark and illuminated conditions were performed with different absorber layer thicknesses, material...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
Y. Özer, “High performance HgCdTe photodetector desings via dark current suppression,” M.S. - Master of Science, Middle East Technical University, 2018.