Light Emission from Silicon-Rich Nitride Nanostructures

Dal Negro, Luca
Li, Rui
Warga, Joseph
Yerci, Selçuk
Basu, Soumendra
Hamel, Sebastien
Galli, Giulia
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500–900°C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices. This work was supported by the MRSEC Program of the National Science Foundation under Contract No. DMR 02-13282 and made use of MRSEC Shared Facilities supported by NSF. The authors acknowledge V. Sukhovatkin, F. Chang, and Professor E. H. Sargent at the University of Toronto, Canada. The LLNL work was performed under the auspices of the US Department of Energy by the University of California, Lawrence Livermore National Laboratory under Contract No. W-7405-Eng-48.


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Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at ...
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Özdemir, S.; Öktü, Özcan (Elsevier BV, 1989-1)
Thermally stimulated conductivity (TSC) and photoconductivity were measured before and after light irradiation in hydrogenated amorphous silicon (a-Si:H) films prepared by glow discharge technique. It was observed that even medium-level of exposure to light decreased both the TSC and photoconductivity by nearly an order of magnitude over a temperature range between ∼ 100 and 300 K. From these measurements the density of gap states (DOS) between the dark Fermi level and conduction band mobility edge were cal...
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Kılıç, İlker; Katırcıoğlu, Bayram; Department of Physics (2006)
Various carbon content hydrogenated amorphous silicon carbide (a-Si1ŁxCx:H) and hydrogenated amorphous silicon (a-Si:H) thin films have been deposited on various substrates by using plasma enhanced chemical vapour deposition (PECVD) technique. Transmission spectra of these films have been determined within UV-Visible region and the obtained data were analysed to find related physical constants such as; refractive indices, thicknesses, etc. Fourier transform infrared (FT-IR) spectrometry technique has been u...
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Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distribu...
Citation Formats
L. Dal Negro et al., Light Emission from Silicon-Rich Nitride Nanostructures. 2008.