Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx

Download

index.pdf

Date

2011-03-14

Author

Li, Rui
Yerci, Selçuk
Kucheyev, Sergei O.
van Buuren, Tony
Dal Negro, Luca

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

223
views

125
downloads

Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at the whispering gallery resonant modes. These results provide an alternative approach for the engineering of Si-based optical amplifiers and lasers on a silicon nitride materials platform. (C) 2011 Optical Society of America

Subject Keywords

Resonators, Integrated optics devices, Rareearth-doped materials, Microcavity devices, Rare earth and transition metal solid-state lasers

URI

https://hdl.handle.net/11511/31212

Journal

OPTICS EXPRESS

DOI

https://doi.org/10.1364/oe.19.005379

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Energy transfer and 1.54 mu m emission in amorphous silicon nitride films Yerci, Selçuk; Kucheyev, S. O.; VAN BUUREN, TONY; Basu, S. N.; Dal Negro, L. (2009-07-20) Er-doped amorphous silicon nitride films with various Si concentrations (Er:SiNx) were fabricated by reactive magnetron cosputtering followed by thermal annealing. The effects of Si concentrations and annealing temperatures were investigated in relation to Er emission and excitation processes. Efficient excitation of Er ions was demonstrated within a broad energy spectrum and attributed to disorder-induced localized transitions in amorphous Er:SiNx. A systematic optimization of the 1.54 mu m emission was pe...
Electrical transport, optical and thermal properties of polyaniline-pumice composites YILMAZ, KORAY; Akgoz, A.; Cabuk, M.; Karaagac, H.; KARABULUT, ORHAN; YAVUZ, Mustafa (2011-11-01) In this study, electrical conductivity, photoconductivity, absorbance and thermal properties of polyaniline (PANI) and polyaniline-pumice composites were investigated. Temperature dependent conductivity and photoconductivity measurements were carried out in the temperature range of 80-400K. The measurements revealed that the dominant conduction mechanisms in polyaniline and 15% pumice doped composite were hopping conduction. The low activation energies calculated for 36% pumice doped composite indicated tha...
High temperature chemistry of some borophosphates, phase relations and structural studies Seyyidoğlu, Semih; Kızılyallı, Meral; Department of Chemistry (2003) The solid state, hydrothermal and flux methods were used for the investigation of alkaline earth and transition metal borophosphate compounds. The products and the phase relations were investigated by XRD, IR, DTA, and EDX methods. The solid state reactions of several boron compounds with different phosphating agents have been studied in the temperature range of 400-1200 oC. Hydrothermal and flux techniques were performed at 150 oC and 1200 oC, respectively. On the other hand, an attempt has been made to pr...
Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics Minissale, S.; Yerci, Selçuk; Dal Negro, L. (2012-01-09) We investigate the nonlinear optical properties of Si-rich silicon oxide (SRO) and Si-rich silicon nitride (SRN) samples as a function of silicon content, annealing temperature, and excitation wavelength. Using the Z-scan technique, we measure the non-linear refractive index n(2) and the nonlinear absorption coefficient beta for a large number of samples fabricated by reactive co-sputtering. Moreover, we characterize the nonlinear optical parameters of SRN in the broad spectral region 1100-1500 nm and show ...
Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals Ferraioli, L.; Cazzanelli, M.; Daldosso, N.; Mulloni, V.; Bellutti, P.; Yerci, Selçuk; Turan, Raşit; Mikhaylov, A.n.; Tetelbaum, D.ı.; Pavesi, L. (null; 2006-12-01) Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon.

Citation Formats

R. Li, S. Yerci, S. O. Kucheyev, T. van Buuren, and L. Dal Negro, “Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx,” OPTICS EXPRESS, pp. 5379–5385, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31212.