Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx

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2011-03-14
Li, Rui
Yerci, Selçuk
Kucheyev, Sergei O.
van Buuren, Tony
Dal Negro, Luca
Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at the whispering gallery resonant modes. These results provide an alternative approach for the engineering of Si-based optical amplifiers and lasers on a silicon nitride materials platform. (C) 2011 Optical Society of America
OPTICS EXPRESS

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Citation Formats
R. Li, S. Yerci, S. O. Kucheyev, T. van Buuren, and L. Dal Negro, “Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx,” OPTICS EXPRESS, pp. 5379–5385, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31212.