Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Planar silicon-rich nitride resonators doped with neodymium
Date
2011-12-01
Author
Olaosebikan, Debo
Lipson, Michal
Yerci, Selçuk
Negro, Luca Dal
Metadata
Show full item record
Item Usage Stats
154
views
0
downloads
Cite This
We report on the characterization of neodymium doped silicon rich nitride resonators at 1550nm. We demonstrate the feasibility of use in photonic circuits and demonstrate ring resonators with quality factors of > 5,000.
Subject Keywords
Silicon oxides
,
Erbium
,
Electrochemiluminescence
URI
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84894090426&origin=inward
https://hdl.handle.net/11511/74440
DOI
https://doi.org/10.1364/cleo_at.2011.jwa61
Conference Name
CLEO: Applications and Technology (1–6 May 2011)
Collections
Department of Electrical and Electronics Engineering, Conference / Seminar
Suggestions
OpenMETU
Core
Pump-probe measurements in silicon-rich nitride waveguides and resonators doped with erbium
Olaosebikan, Debo; Gondarenko, Alexander; Preston, Kyle; Lipson, Michal; Yerci, SELÇUK; Li, Rui; Negro, Luca Dal (2009-12-01)
We report a suppression, attributed to erbium stimulated emission, of the photoinduced absorption of a 1.53um probe in erbium doped silicon rich nitride waveguides. Resonators with record high quality factors >14,000 are achieved.
Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films
Yerci, Selçuk; Basu, Soumendra N.; Negro, Luca Dal (2009-12-01)
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.
Epoxidation of Ethylene by Silver Oxide (Ag2O) Cluster: A Density Functional Theory Study
Fellah, Mehmet Ferdi; van Santen, Rutger A.; Önal, Işık (2011-06-01)
Density functional theory (DFT) calculations were employed to study epoxidation of ethylene on a [Ag14O9] cluster model representing silver oxide (001) surface. Theoretical results obtained in this study showed that formation paths of acetaldehyde and vinyl alcohol have higher activation barriers than that of ethylene oxide formation path on silver oxide (35 and 35 vs. 20 kcal/mol). Formation of the ethylene oxometallocycle intermediate is found to have a low probability on Ag2O(001) surface. The essential ...
Terahertz Time-Domain Study of Silver Nanoparticles Synthesized by Laser Ablation in Organic Liquid
Koral, Can; ORTAÇ, Bülend; Altan, Hakan (2016-07-01)
We report the investigation of laser-synthesized Ag nanoparticles (Ag-NPs) in an organic liquid environment by using terahertz time-domain spectroscopy (THz-TDS) technique. Colloidal Ag-NPs with an average diameter of 10 nm in two-propanol solution through nanosecond pulsed laser ablation were synthesized. THz-TDS measurements were performed on different volumetric concentration of Ag-NPs suspensions placed in 2-mm path length quartz cuvette. Due to the dispersive and highly absorptive nature of the nano li...
Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter
ANUTGAN, MUSTAFA; ANUTGAN, TAMİLA; ATILGAN, İSMAİL; Katircioglu, Bayram (2011-08-01)
The deposition parameters of doped hydrogenated nanocrystalline silicon grown by plasma-enhanced chemical vapor deposition were scanned to obtain highly conductive films. The optimized p(+) and n(+) nc-Si: H films were used as injecting layers in the fabrication of Si-rich hydrogenated amorphous silicon nitride (a-SiN(x) : H)-based heterojunction p(+) in(+) diode. The as-grown diode was subjected to a Joule-heating-assisted forming process (FP) via the application of a high electric field. The modifications...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
D. Olaosebikan, M. Lipson, S. Yerci, and L. D. Negro, “Planar silicon-rich nitride resonators doped with neodymium,” presented at the CLEO: Applications and Technology (1–6 May 2011), Baltimore, Maryland United States, 2011, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84894090426&origin=inward.