Secondary growth of microporous vanadosilicate AM-6 films

Kuzyaka, Duygu
Galioglu, Sezin
Akata Kurç, Burcu
Oriented vanadosilicate AM-6 thin films with an average thickness of 1-2 mu m were prepared on the ITO coated glass substrates using secondary growth method with a partial a(b)-out-of-plane preferred crystal orientation for the first time. In secondary growth method, titanosilicate ETS-10 crystals were deposited on the substrate from a colloidal suspension to form seed layers. Then, the hydrothermal growth of the seed crystals was conducted to form AM-6 films. It was observed that the AM-6 films formed possess similar 1-D VO3 (2-) quantum wires as also observed in powder AM-6 crystals. Afterward, the effect of reaction temperature and amount of water in the secondary growth gel on crystal morphology and a(b)-out-of-plane crystallographic preferred orientation (CPO) were investigated to gain a better understanding of the secondary growth mechanism of vanadosilicate AM-6 films. The results suggested that the increased amount of water leads to increased CPO in the AM-6 films, whereas an increase in reaction temperature from 503 to 528 K leads to more c-oriented AM-6 films with a decreased CPO value. Furthermore, an increase in the reaction temperature led to a decrease in the reaction time, resulting in the formation of quartz impurity. Accordingly, well intergrown a(b)-out-of-plane oriented vanadosilicate films were grown for the first time using ETS-10 seed crystals and it is believed that this work provides an effective pathway for controlling the synthesis of AM-6 films expanding the possible range of applications of these materials possessing 1-D quantum wires.


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Oriented polycrystalline ETS-10 thin films (average thickness similar to 1.50-1.75 mu m) were prepared on the ITO glass substrates using secondary growth of ETS-10 multilayers with a partial a(b)-out-of-plane preferred crystal orientation. After secondary growth, the films showed a columnar grain microstructure, and a significantly increased degree of a(b)-out-of-plane orientation. This orientation is desirable for advanced applications of ETS-10 films. The prepared films were strongly attached to the ITO g...
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Kesim, Mehmet Tümerkan; Durucan, Caner; Department of Metallurgical and Materials Engineering (2012)
Indium tin oxide (ITO) thin films were formed on glass substrates by sol-gel method. Coating sols were prepared using indium chloride tetrahydrate (InCl3•4H2O) and tin-chloride pentahydrate (SnCl4•5H2O) stabilized in organic solvents (acetylacetone and ethanol). First attempt was to synthesize ITO thin films using standard/unmodified coating sols. The effect of calcination treatment in air (300 – 600 °C) and number of coating layer(s) (1, 4, 7 or 10) on optoelectronic properties (electrical conductivity and...
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Ionic conductivity of microporous titanosilicate ETS-10 and ion-exchanged Mn+-ETS-10 (where, Mn+ = Li+, Na+, Mg2+, Zn2+, Ca2+) thin films prepared by secondary growth method
Galioglu, Sezin; Çam, İbrahim; Akata Kurç, Burcu (2017-09-15)
Impedance spectroscopy was used to investigate the long-range ionic conductivity of the microporous, titanosilicate (Na,K)-ETS-10 and ion-exchanged Mn+-ETS-10 (where, Mn+ = Li+, Na+, Mg2+, Zn2+, Ca2+) thin films prepared by secondary growth method. To figure out the effect of grain boundary on ionic conduction, as-synthesized (Na,K)-ETS-10 films possessing different thicknesses of columnar grain structure (i.e., films prepared via 4h-, 6h-, 8h-, and 10h-growth) were tested. The conductivities of the films w...
Citation Formats
D. Kuzyaka, S. Galioglu, and B. Akata Kurç, “Secondary growth of microporous vanadosilicate AM-6 films,” JOURNAL OF POROUS MATERIALS, pp. 1319–1327, 2016, Accessed: 00, 2020. [Online]. Available: