Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements

Date

2016-10-15

Author

Delice, S.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

189
views

0
downloads

Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10-300 K) with various heating rates between 0.4 and 1.2 K s(-1). One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s(-1). The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Three points method showed that mixed order of kinetic dominates the trapping level. Shift of peak maximum temperature to higher values and decrease in TL intensity were observed as the heating rate was increased progressively. Distribution of traps was demonstrated using an experimental method based on illumination temperature varying between 10 and 14 K.

Subject Keywords

Semiconductors, Optical properties, Luminescence, Defects

URI

https://hdl.handle.net/11511/33261

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2016.07.006

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Defect characterization of Ga4Se3S layered single crystals by thermoluminescence IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01) Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Trapping center parameters in In6S7 crystals IŞIK, MEHMET; Hasanlı, Nızamı (2011-07-01) Thermally stimulated current measurements were carried out on In6S7 single crystals in the temperature range of 10-225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c-axis of crystals. The analysis of the glow curve according to various methods, such as curve fitting, initial rise and peak shape methods, gives results in good agreement with each other and revealed two trapping centers in In6S7 with activation energi...
Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-10-19) Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was...
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2014-11-01) Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Temperature-dependent optical properties of GaSe layered single crystals IŞIK, MEHMET; TUĞAY, EVRİN; Gasanly, N. M. (2016-01-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380-1100nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280K. The rate o...

Citation Formats

S. Delice and N. Hasanlı, “Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements,” PHYSICA B-CONDENSED MATTER, pp. 44–48, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33261.