Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements

Date

2016-10-15

Author

Delice, S.
Hasanlı, Nızamı

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Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10-300 K) with various heating rates between 0.4 and 1.2 K s(-1). One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s(-1). The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Three points method showed that mixed order of kinetic dominates the trapping level. Shift of peak maximum temperature to higher values and decrease in TL intensity were observed as the heating rate was increased progressively. Distribution of traps was demonstrated using an experimental method based on illumination temperature varying between 10 and 14 K.

Subject Keywords

Semiconductors, Optical properties, Luminescence, Defects

URI

https://hdl.handle.net/11511/33261

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2016.07.006

Collections

Department of Physics, Article

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Citation Formats

S. Delice and N. Hasanlı, “Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements,” PHYSICA B-CONDENSED MATTER, pp. 44–48, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33261.