Trapping center parameters in In6S7 crystals

Date

2011-07-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

225
views

0
downloads

Thermally stimulated current measurements were carried out on In6S7 single crystals in the temperature range of 10-225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c-axis of crystals. The analysis of the glow curve according to various methods, such as curve fitting, initial rise and peak shape methods, gives results in good agreement with each other and revealed two trapping centers in In6S7 with activation energies of 157 and 290 meV. Their capture cross sections have been determined as 7.5 x 10(-23) and 7.1 x 10(-20) cm(2),respectively. The good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping has confirmed that retrapping is negligible in these centers.

Subject Keywords

Semiconductors, Chalcogenides, Defects, Electrical properties

URI

https://hdl.handle.net/11511/32859

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2011.04.008

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-10-19) Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was...
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01) As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Trapping center parameters of TlGaSe2 layered crystals Yuksek, NS; Kavas, H; Hasanlı, Nızamı; Ozkan, H (Elsevier BV, 2004-02-15) Thermally stimulated current measurements are carried out on as-grown TlGaSe2 layered single crystals in the temperature range of 90-220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV. The retrapping process is negligible for these levels, as confirmed by good agreement between the experimental results and theoretical predictions of the model that assumes slow retrapping. The calculation yielded 2.3 x 10(-24) and 1....
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2016-10-15) Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10-300 K) with various heating rates between 0.4 and 1.2 K s(-1). One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s(-1). The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Th...
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2014-11-01) Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...

Citation Formats

M. IŞIK and N. Hasanlı, “Trapping center parameters in In6S7 crystals,” PHYSICA B-CONDENSED MATTER, pp. 2650–2653, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32859.