Characteristic features of thermoluminescence in neodymium-doped gallium sulfide

Date

2018-06-01

Author

Güler, Işıkhan
Ahmedova, F.
Guseinov, A.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

143
views

0
downloads

The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed that one of the observed peaks showed normal behavior according to the one trap-one recombination model, whereas the other model showed anomalous heating rate behavior. TL experiments were also carried out at different illumination temperatures from 10 to 32 K; maximum peak temperature remained almost the same at various illumination temperatures. This behavior indicated that the revealed trapping centers are single, discrete levels. The TL glow curves of undoped GaS crystals were also investigated and the effect of Nd doping on the TL characteristics of crystals is discussed in the manuscript.

Subject Keywords

Defects, Doping, Thermoluminescence

URI

https://hdl.handle.net/11511/32293

Journal

LUMINESCENCE

DOI

https://doi.org/10.1002/bio.3473

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2014-11-01) Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Low-temperature thermoluminescence in TlGaS2 layered single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2013-03-01) Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five de...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01) Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25) Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Photo-transferred thermoluminescence of shallow traps in beta-irradiated BeO ceramics Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2017-07-01) Photo-transferred thermoluminescence signals from beryllium oxide (BeO) ceramics were measured in the low temperature range of 10-300 K. Samples irradiated at room temperature using a Sr-90/Y-19 beta source were cooled down to 10 K and trapped charges were photo-transferred at this low temperature using the light from a high power blue LED emitting at similar to 470 nm (2.6 eV). Thermoluminescence glow curve recorded at 0.2 K/s heating rate exhibited three peaks around 90, 160 and 185 K. The analyses of the...

Citation Formats

I. Güler, F. Ahmedova, A. Guseinov, and N. Hasanlı, “Characteristic features of thermoluminescence in neodymium-doped gallium sulfide,” LUMINESCENCE, pp. 759–763, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32293.