Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals

2012-12-25
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels.
JOURNAL OF ALLOYS AND COMPOUNDS

Suggestions

Low-temperature thermoluminescence in TlGaS2 layered single crystals
Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2013-03-01)
Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five de...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01)
Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements
Delice, S.; Hasanlı, Nızamı (2014-11-01)
Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals
Hasanlı, Nızamı (2013-01-15)
Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor
Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31)
The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Citation Formats
M. Isik, E. Bulur, and N. Hasanlı, “Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 153–156, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42083.