Low-temperature thermoluminescence in TlGaS2 layered single crystals

Date

2013-03-01

Author

Isik, M.
Bulur, Enver
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

196
views

0
downloads

Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five defect centers with activation energies of 13, 27, 87, 94 and 291 meV. The results of all methods were found to be in good agreement with each other. The consistency between the theoretical predictions for slow retrapping and experimental results showed that the retrapping process for the observed centers was negligible. The independence of peak position from concentration of carriers trapped in defect levels was also another indication of negligible retrapping. The dependence of TL glow curves on heating rate and distribution of traps was also studied.

Subject Keywords

Defects, Semiconductors, Thermoluminescence

URI

https://hdl.handle.net/11511/41184

Journal

JOURNAL OF LUMINESCENCE

DOI

https://doi.org/10.1016/j.jlumin.2012.10.025

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Defect characterization of Ga4Se3S layered single crystals by thermoluminescence IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01) Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25) Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2014-11-01) Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Characteristic features of thermoluminescence in neodymium-doped gallium sulfide Güler, Işıkhan; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-06-01) The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed ...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...

Citation Formats

M. Isik, E. Bulur, and N. Hasanlı, “Low-temperature thermoluminescence in TlGaS2 layered single crystals,” JOURNAL OF LUMINESCENCE, pp. 60–65, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41184.