Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements

Date

2014-11-01

Author

Delice, S.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

137
views

0
downloads

Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical method also established that the trap center exhibits the characteristics of mixed (general) kinetic order. In addition, various heating rate analysis gave a compatible result (13meV) with curve fitting as the temperature lag effect was taken into consideration. Distribution of traps was also investigated using an experimental method. A quasi-continuous distribution was attributed to the determined trap centers.

Subject Keywords

Semiconductors, Thermoluminescence, Defects

URI

https://hdl.handle.net/11511/48646

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.201400140

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Characteristic features of thermoluminescence in neodymium-doped gallium sulfide Güler, Işıkhan; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-06-01) The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed ...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25) Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Low-temperature thermoluminescence in TlGaS2 layered single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2013-03-01) Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five de...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01) Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01) As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...

Citation Formats

S. Delice and N. Hasanlı, “Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 845–849, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48646.