Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals

Date

2008-04-15

Author

Basa, P.
Alagoz, A. S.
Lohner, T.
Kulakci, M.
Turan, Raşit
Nagy, K.
Horvath, Zs. J.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

116
views

0
downloads

SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40-100%. Most of the structures exhibited low breakdown voltages. The current through the structures became Schottky-like after breakdown. However, some p-type samples showed a considerable memory effect. It was obtained by spectroscopic ellipsometry that the middle layer contains amorphous Ge phase as well. The results also suggest intermixing of the layers during the sputtering and/or the annealing process. (C) 2007 Published by Elsevier B.V.

Subject Keywords

Sputtering, SiO2 structure, Annealing, Ge nanocrystals

URI

https://hdl.handle.net/11511/32749

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2007.10.075

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition KALELİ, Murat; ALDEMİR, Durmuş Ali; Parlak, Mehmet (2017-09-01) Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag-AIS-Ag-AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 x 10(3). The ideality factor and saturation current were found to be ...
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01) ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation SERİNCAN, UĞUR; Yerci, Selçuk; KULAKCI, MUSTAFA; Turan, Raşit (2005-10-01) Fourier transformed infrared spectroscopy (FTIR) has been employed to observe and understand structural variations in SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation as a function of processing parameters. The Si-O asymmetric stretching peak of absorption spectra were used to monitor the evolution of SiOx (x < 2) films during the annealing process. It was shown that the recovery process in Si-O network is quite different in Ge and Si implanted samples and the deformation cause...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films Gullu, H. H.; Parlak, Mehmet (2016-05-01) In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Mechanical and optical properties of SiO2 thin films deposited on glass Simurka, Lukas; Ctvrtlik, Radim; Tomastik, Jan; Bektaş, Gence; Svoboda, Jan; Bange, Klaus (2018-09-01) The optical and mechanical properties of amorphous SiO2 films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm(-3) as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary...

Citation Formats

P. Basa et al., “Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals,” APPLIED SURFACE SCIENCE, pp. 3626–3629, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32749.