Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals

Date

2008-04-15

Author

Basa, P.
Alagoz, A. S.
Lohner, T.
Kulakci, M.
Turan, Raşit
Nagy, K.
Horvath, Zs. J.

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SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40-100%. Most of the structures exhibited low breakdown voltages. The current through the structures became Schottky-like after breakdown. However, some p-type samples showed a considerable memory effect. It was obtained by spectroscopic ellipsometry that the middle layer contains amorphous Ge phase as well. The results also suggest intermixing of the layers during the sputtering and/or the annealing process. (C) 2007 Published by Elsevier B.V.

Subject Keywords

Sputtering, SiO2 structure, Annealing, Ge nanocrystals

URI

https://hdl.handle.net/11511/32749

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2007.10.075

Collections

Department of Physics, Article

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Citation Formats

P. Basa et al., “Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals,” APPLIED SURFACE SCIENCE, pp. 3626–3629, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32749.