Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1)

Date

2013-12-25

Author

IŞIK, MEHMET
Hasanlı, Nızamı

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The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights

Subject Keywords

Semiconductors, Ellipsometry, Optical properties

URI

https://hdl.handle.net/11511/40893

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2013.07.134

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK and N. Hasanlı, “Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1),” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 542–546, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40893.