Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1)

Date

2013-12-25

Author

IŞIK, MEHMET
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

202
views

0
downloads

The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights

Subject Keywords

Semiconductors, Ellipsometry, Optical properties

URI

https://hdl.handle.net/11511/40893

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2013.07.134

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2014-01-01) The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectri...
Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0 <= x <= 1) IŞIK, MEHMET; Hasanlı, Nızamı (2012-09-15) In this paper, the spectroscopic ellipsometry measurements on TlGaS2xSe2(1 - x) mixed crystals (0 <= x <= 1) were carried out on the layer-plane (001) surfaces with light polarization E perpendicular to c* in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the dielectric function, refractive index and extinction coefficient were calculated from ellipsometric data using the ambient-substrate optical model. The critical point energies in the above-band gap energy range have ...
Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements IŞIK, MEHMET; ÇETİN, ŞABAN; Hasanlı, Nızamı; ÖZÇELİK, SÜLEYMAN (2012-05-01) We have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53...
Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2013-01-01) Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to inter...
Ellipsometry study of optical parameters of AgIn5S8 crystals IŞIK, MEHMET; Gasanly, NIZAMI (2015-12-01) Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometiy experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscill...

Citation Formats

M. IŞIK and N. Hasanlı, “Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1),” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 542–546, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40893.