A new design and a fabrication approach to realize a high performance three axes capacitive MEMS accelerometer

Date

2016-06-15

Author

Aydemir, Akin
Terzioglu, Yunus
Akın, Tayfun

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

1
views

0
downloads

This paper presents a new fabrication approach and design for a three axis capacitive MEMS accelerometer that is capable of measuring externally applied accelerations in three orthogonal axes. Individual lateral and vertical axis accelerometers are fabricated in the same die on an SOI wafer which is anodically bonded to a glass substrate. Handle layer of the SOI wafer is used as the top electrode for the vertical axis accelerometer. This accelerometer has a 2 mm(2) perforated electrode area anchored to the glass substrate by four beams. The lateral axis accelerometers on the other hand, have comb finger structures with a 2.7 x 4.2 mm device size and anchored to the glass substrate by six folded beams. Rest capacitance of the vertical axis accelerometer is designed to be 8.8 pF, and it is 10.2 pF for the lateral axis accelerometers. The system level performance results are obtained using analog readout circuitry integrated to each axis separately. The x- and y-axis accelerometers show a noise floor and bias instability equal or better than 13.9 mu g/root Hz and 17 mu g, respectively, while the z-axis accelerometer shows 17.8 mu g/root Hz noise floor and 36 mu g bias instability values.

Subject Keywords

Three-axis accelerometer, Out of plane accelerometer, Capacitive MEMS accelerometer, SOI

URI

https://hdl.handle.net/11511/33102

Collections

Department of Electrical and Electronics Engineering, Article