Comparison of Two Alternative Fabrication Processes for a Three-Axis Capacitive MEMS Accelerometer

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10.1016:j.proeng.2012.09.153.pdf

Date

2012-09-12

Author

Tez, S.
Akın, Tayfun

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This paper presents a three-axis capacitive MEMS accelerometer implemented by fabricating lateral and vertical accelerometers in a same die with two alternative processes: a double glass modified dissolved wafer (DGM-DWP) and a double glass modified silicon-on-glass (DGM-SOG) processes. The accelerometers are implemented with a 35 mu m structural layer, and the three-axis accelerometer die measures 12mmx7mmx1mm in each process. Each process includes a second glass wafer which, not only allows implementing a top electrode for the vertical accelerometer, but also forms an inherent cap for the entire structure. Thanks to the stress-free structural layer coming from the SOI wafer, the DGM-SOG process allows obtaining the same rest capacitance values in each side of the accelerometer, which is one of the most important challenges for a functional high performance operation.

Subject Keywords

Three-axis capacitive MEMS accelerometer, Glass-silicon-glass, SiGeB, SOI

URI

https://hdl.handle.net/11511/35717

DOI

https://doi.org/10.1016/j.proeng.2012.09.153

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

S. Tez and T. Akın, “Comparison of Two Alternative Fabrication Processes for a Three-Axis Capacitive MEMS Accelerometer,” 2012, vol. 47, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35717.