Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Investigation of optical parameters of thermally evaporated ZnSe thin films
Date
2015-04-29
Author
Gullu, H. H.
Coşkun, Emre
Parlak, Mehmet
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
210
views
0
downloads
Cite This
In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method using pure elemental (Zn and Se) sources. The physical properties of the films have been investigated in terms of the structural and optical characterizations depending on the post-annealing process under nitrogen atmosphere in the temperature between 300 and 500 degrees C for 30 min. The structural and compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). The compositional analysis indicated that the deposited films were nearly stoichiometric whereas there was a decrease in Se and increase in the Zn contents. This implies the segregation and/or re-evaporation of Se atoms from the thin film structure. The optical characteristics were studied by using the room temperature transmission measurements. The analysis of transmission values showed that the band gap values changed in between 2.38 and 2.62 eV depending on the annealing temperatures.
Subject Keywords
ZnSe
,
Thin films
,
Optical parameters
URI
https://hdl.handle.net/11511/45954
DOI
https://doi.org/10.1002/pssc.201510064
Collections
Department of Physics, Conference / Seminar
Suggestions
OpenMETU
Core
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode
KALELİ, Murat; Parlak, Mehmet; Ercelebi, C. (2011-10-12)
In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R...
Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films
Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01)
The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films
Isik, M.; Hasanlı, Nızamı (2020-09-01)
Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteri...
Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method
Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01)
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
Bayrakli, O.; Terlemezoğlu, Makbule; Gullu, H. H.; Parlak, Mehmet (IOP Publishing, 2017-08-01)
Cu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for different evaporation cycles were investigated. In situ annealing at 400 degrees C under Se evaporation was applied to promote conversion of precursor layers to quaternary compound structure and additionally, subsequent post-annealing processes under nitrogen atmosphere at 450 degrees C was car...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
H. H. Gullu, E. Coşkun, and M. Parlak, “Investigation of optical parameters of thermally evaporated ZnSe thin films,” 2015, vol. 12, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45954.
