Investigation of optical parameters of thermally evaporated ZnSe thin films

Gullu, H. H.
Coşkun, Emre
Parlak, Mehmet
In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method using pure elemental (Zn and Se) sources. The physical properties of the films have been investigated in terms of the structural and optical characterizations depending on the post-annealing process under nitrogen atmosphere in the temperature between 300 and 500 degrees C for 30 min. The structural and compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). The compositional analysis indicated that the deposited films were nearly stoichiometric whereas there was a decrease in Se and increase in the Zn contents. This implies the segregation and/or re-evaporation of Se atoms from the thin film structure. The optical characteristics were studied by using the room temperature transmission measurements. The analysis of transmission values showed that the band gap values changed in between 2.38 and 2.62 eV depending on the annealing temperatures.


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Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01)
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
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Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01)
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Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteri...
Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
Bayrakli, O.; Terlemezoğlu, Makbule; Gullu, H. H.; Parlak, Mehmet (IOP Publishing, 2017-08-01)
Cu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for different evaporation cycles were investigated. In situ annealing at 400 degrees C under Se evaporation was applied to promote conversion of precursor layers to quaternary compound structure and additionally, subsequent post-annealing processes under nitrogen atmosphere at 450 degrees C was car...
Citation Formats
H. H. Gullu, E. Coşkun, and M. Parlak, “Investigation of optical parameters of thermally evaporated ZnSe thin films,” 2015, vol. 12, Accessed: 00, 2020. [Online]. Available: