Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration

Date

2019-10-30

Author

Soydan, Alper Kaan
Yüksel, Mehmet Berat
Işık Akçakaya, Dilek
Külah, Haluk

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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In this study, development of a wafer level, void free TSV fabrication process flow and feasibility study of TSV integration to MEMS piezoelectric resonator devices have been presented. TSV structures with 100 mu m diameter and 350 mu m depth were copper filled with via sealing and bottom-up electroplating process which is a two-step technique. Four-point Kelvin measurements showed 0.8 m Omega TSV resistance on fabricated TSVs. Furthermore, TSV frames were epoxy bonded to MEMS acoustic transducers, which showed 90% to the resonator signal from the TSV.

Subject Keywords

Through silicon via, Electroplating, MEMS resonator, Kelvin measurement, Cochlear implant

URI

https://hdl.handle.net/11511/33150

DOI

https://doi.org/10.1109/sensors43011.2019.8956828

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

A. K. Soydan, M. B. Yüksel, D. Işık Akçakaya, and H. Külah, “Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33150.