Adsorption of H2O on double layer stepped Si(111) surface

1997-03-10
We have investigated possible water adsorption forms on stepped Si(111) surface. Calculations have been performed by using the empirical tight-binding method. Two types of adsorption model of water on single layer stepped Si(111) surface have been considered; one of them is the dissociative type (H, OH) and the other is the molecular type (H2O). The total electronic energy and TDOS calculations lead to a dissociative type of adsorption of water on stepped Si(111) surface excluding the molecular type. (C) 1997 Elsevier Science B.V.
SURFACE SCIENCE

Suggestions

Adsorption of water on single and double layer stepped Si(100) surfaces
Katırcıoğlu, Şenay; Erkoc, S (2001-07-01)
We have investigated possible water adsorption forms on S-A, D-A and D-B type stepped Si(100) surfaces. Calculations are performed using the empirical tight binding method. Two types of adsorption models of water on stepped Si(100) surfaces have been considered: the dissociative type (H, OH) and the molecular type (H2O). The results of the density of states indicate a dissociative type of water adsorption on S-A, D-A and D-B type stepped Si(100) surfaces.
Water adsorption on the stepped Si(110) surface
Katırcıoğlu, Şenay (Wiley, 1996-07-01)
We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculations have been performed by using the empirical tight-binding method. Two types of adsorption model of water on a single layer stepped Si(110) surface have been considered, one of them is the dissociative type (H, OH) and the other one is the molecular type (H2O). The total electronic energy and TDOS calculations lead to a dissociative type of water adsorption on the stepped Si(110) surface excluding the molecul...
Adsorption of oxygen and hydrogen on stepped Si(100) surface
Salman, SA; Katırcıoğlu, Şenay (1999-06-01)
We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.
Physical properties of CdSe thin films produced by thermal evaporation and e-beam techniques
Huş, Şaban Mustafa; Parlak, Mehmet; Department of Physics (2006)
CdSe thin films were deposited by thermal evaporation and e-beam evaporation techniques on to well cleaned glass substrates. Low dose of boron have been implanted on a group of samples. EDAX and X-ray patterns revealed that almost stoichiometric polycrystalline films have been deposited in (002) preferred orientation. An analysis of optical measurements revealed a sharp increase in absorption coefficient below 700 nm and existence of a direct allowed transition. The calculated band gap was around 1.7 eV. Th...
ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE
Katırcıoğlu, Şenay (1994-05-20)
We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.
Citation Formats
Ş. Katırcıoğlu, “Adsorption of H2O on double layer stepped Si(111) surface,” SURFACE SCIENCE, pp. 208–214, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34797.