Water adsorption on the stepped Si(110) surface

1996-07-01
We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculations have been performed by using the empirical tight-binding method. Two types of adsorption model of water on a single layer stepped Si(110) surface have been considered, one of them is the dissociative type (H, OH) and the other one is the molecular type (H2O). The total electronic energy and TDOS calculations lead to a dissociative type of water adsorption on the stepped Si(110) surface excluding the molecular type as it was found on the flat Si(110) surface.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Suggestions

Direct measurement of molecular stiffness and damping in confined water layers
JEFFERY, STEVE; HOFFMANN, PETER M; PETHİCA, JOHN B; RAMANUJAN, CHANDRA; ÖZER, HAKAN ÖZGÜR; Oral, Ahmet (American Physical Society (APS), 2004-08-01)
We present direct and linear measurements of the normal stiffness and damping of a confined, few molecule thick water layer. The measurements were obtained by use of a small amplitude (0.36 Angstrom), off-resonance atomic force microscopy technique. We measured stiffness and damping oscillations revealing up to seven molecular layers separated by 2.526+/-0.482 Angstrom. Relaxation times could also be calculated and were found to indicate a significant slow-down of the dynamics of the system as the confining...
Temperature and pressure dependence of the Raman intensity and frequency of a soft mode near the tricritical point in the ferroelectric SbSI
Yurtseven, Hasan Hamit (Informa UK Limited, 2016-01-01)
We analyze the pressure dependence of the intensity and the frequency of a soft mode from the Raman and elastic light scattering experiments as reported in the literature close to the ferroelectric - paraelectric transition in SbSI crystal. The Raman intensity of this mode is analyzed as a function of pressure at constant temperatures of 272K (first order transition) and 234K (tricritical or second order transition) according to a power-law formula. Our analysis of the Raman intensity gives closely the mean...
Temperature dependence of electrical properties in Cu0.5Ag0.5InSe2/Si heterostructure
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2018-07-01)
The polycrystalline Cu0.5Ag0.5InSe2 thin film was deposited on mono-crystalline n-Si wafer by sequential thermal evaporation of elemental sources. p-Cu0.5Ag0.5InSe2/n-Si heterojunction diode was fabricated and the current-voltage characteristics of the diode at various temperatures were investigated to determine the main diode parameters and dark current transport mechanism. The studied diode structure showed a rectifying behavior with a barrier height of 0.63 eV at room temperature. Series and shunt resist...
Deposition of AgGaS2 thin films by double source thermal evaporation technique
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Springer Science and Business Media LLC, 2011-09-01)
In this study, polycrystalline AgGaS2 thin films were deposited by the sequential evaporation of AgGaS2 and Ag sources with thermal evaporation technique. Thermal treatment in nitrogen atmosphere for 5 min up to 700 A degrees C was applied to the deposited thin films and that resulted in the mono phase AgGaS2 thin films without the participation of any other minor phase. Structural and compositional analyses showed the structure of the films completely changes with annealing process. The measurements of tra...
Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices
Bayhan, H; Ercelebi, C (IOP Publishing, 1997-05-01)
The effects of post-deposition processes such as CdCl2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl2 dip followed by air annealing at 300 degrees C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current tr...
Citation Formats
Ş. Katırcıoğlu, “Water adsorption on the stepped Si(110) surface,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, pp. 77–84, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40645.