Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals

Date

2008-01-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/47661

Journal

PHILOSOPHICAL MAGAZINE

DOI

https://doi.org/10.1080/14786430802382267

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals,” PHILOSOPHICAL MAGAZINE, pp. 2899–2906, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47661.