Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals

Hasanlı, Nızamı
The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.


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QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01)
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01)
Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements
Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01)
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
Numerical evidence of spontaneous division of dissipative solitons in a planar gas discharge-semiconductor system
Rafatov, İsmail (AIP Publishing, 2019-09-01)
This work deals with the formation of patterns of spatially localized solitary objects in a planar semiconductor gas-discharge system with a high Ohmic electrode. These objects, known as dissipative solitons, are generated in this system in the form of self-organized current filaments, which develop from the homogeneous stationary state by the Turing bifurcation. The numerical model reveals, for the first time, evidence of spontaneous division of the current filaments in this system, similar to that observe...
Defect luminescence in undoped p-type GaSe
Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01)
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals,” PHILOSOPHICAL MAGAZINE, pp. 2899–2906, 2008, Accessed: 00, 2020. [Online]. Available: