Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure

Gullu, H. H.
Surucu, O. Bayrakli
Terlemezoğlu, Makbule
Yildiz, D. E.
Parlak, Mehmet
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high-low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.


Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode
Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01)
The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
Optical Modulation With Silicon Microspheres
Yüce, Emre; Serpenguzel, Ali (Institute of Electrical and Electronics Engineers (IEEE), 2009-10-15)
In this letter, a silicon microsphere coupled to a silica optical fiber half coupler has been characterized for electrooptical modulation in the L-band at 1.55 mu m. Electrooptical modulation of the transmitted and the 90 degrees elastic scattered signals for both the TE and the TM polarizations of the microsphere resonances has been observed.
Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-04-01)
In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature ri...
Material and Si-based diode analyses of sputtered ZnTe thin films
Güllü, Hasan Hüseyin; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01)
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was o...
Citation Formats
H. H. Gullu, O. B. Surucu, M. Terlemezoğlu, D. E. Yildiz, and M. Parlak, “Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 9814–9821, 2019, Accessed: 00, 2020. [Online]. Available: