Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Frequently Asked Questions
Frequently Asked Questions
Communities & Collections
Communities & Collections
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Date
2019-05-01
Author
Gullu, H. H.
Surucu, O. Bayrakli
Terlemezoğlu, Makbule
Yildiz, D. E.
Parlak, Mehmet
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
3
views
0
downloads
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high-low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
Subject Keywords
Electrical and Electronic Engineering
,
Atomic and Molecular Physics, and Optics
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/47371
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
DOI
https://doi.org/10.1007/s10854-019-01318-9
Collections
Department of Physics, Article