Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Growth of pentacene on Ag(111) surface: A NEXAFS study
Date
2007-10-31
Author
Pedio, M.
Doyle, B.
Mahne, N.
Giglia, A.
Borgatti, F.
Nannarone, S.
Henze, S. K. M.
Temirov, R.
Tautz, F. S.
Casalis, L.
Hudej, R.
Danışman, Mehmet Fatih
Nickel, B.
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
182
views
0
downloads
Cite This
Thin films of pentacene (C22H14) have become widely used in the field of organic electronics. Here films of C22H14 of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.
Subject Keywords
Surfaces, Coatings and Films
URI
https://hdl.handle.net/11511/35311
Journal
APPLIED SURFACE SCIENCE
DOI
https://doi.org/10.1016/j.apsusc.2007.07.125
Collections
Department of Chemistry, Article
Suggestions
OpenMETU
Core
Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2011-04-15)
Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealin...
Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization
KALELİ, Murat; ÇOLAKOĞLU, TAHİR; Parlak, Mehmet (Elsevier BV, 2013-12-01)
In this study highly stoichiometric and monophase AgInSe2 thin films were prepared by selenization of Ag-InSe precursors and the effect of the annealing temperature on the structural, electrical and optical properties have been investigated. The Se incorporation during selenization process as a function of temperature and the compositions of the samples were determined by energy dispersive X-ray analysis (EDAX). As prepared and selenized films were characterized using X-ray diffraction (XRD), scanning elect...
Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-kappa HfO2/Hf/Si thin film
Cantas, A.; AYGÜN ÖZYÜZER, GÜLNUR; Turan, Raşit (Elsevier BV, 2014-11-01)
High-kappa hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-kappa film, prior to HfO2 deposition, a thin Hf buffer layer was deposited on p-type (100) Si substrate at room temperature. Effect of oxygen gas quantity in the O-2/Ar gas mixture was studied for the optical and structural properties of grown HfO2 high-kappa thin films. The grown thin oxide films were char...
Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2009-03-15)
Polycrystalline AgGaSe2 thin films were deposited by using single crystalline powder of AgGaSe2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing ...
Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition
KARAMAT, SHUMAİLA; Celik, K.; Zaman, S. Shah; Oral, Ahmet (Elsevier BV, 2018-06-01)
High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Pedio et al., “Growth of pentacene on Ag(111) surface: A NEXAFS study,”
APPLIED SURFACE SCIENCE
, pp. 103–107, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35311.