Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization

2013-12-01
KALELİ, Murat
ÇOLAKOĞLU, TAHİR
Parlak, Mehmet
In this study highly stoichiometric and monophase AgInSe2 thin films were prepared by selenization of Ag-InSe precursors and the effect of the annealing temperature on the structural, electrical and optical properties have been investigated. The Se incorporation during selenization process as a function of temperature and the compositions of the samples were determined by energy dispersive X-ray analysis (EDAX). As prepared and selenized films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall effect and photoresponse measurements at room temperature. XRD analysis depicted that the crystal structure of AgInSe2 film was monophase with preferred orientation along the (1 1 2) direction and the lattice parameters a= 6.09, b= 6.09 and c= 11.67 angstrom. The structural evolution was clearly diagnosed by the increase of film thickness during selenization process. It was observed from SEM measurements that the average values of grain size ranging from 0.5 to 4 mu m on the surface of AgInSe2 thin films by increasing selenization temperature from 300 to 450 degrees C. Room temperature conductivity and carrier concentrations of selenized samples determined by means of Hall measurements were found in the range of 0.03-0.88 (Omega-cm)(-1) and 1.35 x 10(15)-7.09 x 10(18) (cm(-1)), respectively. The band gaps of these samples were investigated by spectral photoresponse measurement under light bias in the range of 1.05-2.10 eV. The two stage selenization process is introduced as an applicable approach to fabricate pure monophase AgInSe2 thin films for the usage in thin-film solar cell applications.
APPLIED SURFACE SCIENCE

Suggestions

Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique
Colakoglu, T.; Parlak, Mehmet (Elsevier BV, 2008-01-15)
The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag3In5Se9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 degrees C transformed from the amorphous to polycrystalline structure. The crystallinity of ...
Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2011-04-15)
Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealin...
Preparation and Characterization of Low Density Polyethylene/Ethylene Methyl Acrylate Glycidyl Methacrylate/Organoclay Nanocomposites
Coskunses, Fatma Isik; Yılmazer, Ülkü (Wiley, 2011-06-05)
The effects of organoclay type, compatibilizer, and the addition order of components during melt-blending process on the morphology and thermal, mechanical, and flow properties of ternary nanocomposites based on low-density polyethylene (LDPE) were investigated. As a compatibilizer, ethylene/methyl acrylate/glycidyl methacrylate (E-MA-GMA), as organoclays Cloisites (R) 15A, 25A, and 30B were used. All samples were prepared by a corotating twin screw extruder, followed by injection molding. The highest incre...
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures
ALTINDAL, ŞEMSETTİN; Kanbur, H.; Yildiz, D. E.; Parlak, Mehmet (Elsevier BV, 2007-03-30)
The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height Phi(B0)(I-V), ideality factor (n) and series resistance (R-s) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the Phi(B0)(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperatur...
Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes
AKGÜL, GÜVENÇ; AKSOY, FUNDA; Mulazimoglu, Emre; Ünalan, Hüsnü Emrah; Turan, Raşit (IOP Publishing, 2014-02-12)
In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device....
Citation Formats
M. KALELİ, T. ÇOLAKOĞLU, and M. Parlak, “Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization,” APPLIED SURFACE SCIENCE, pp. 171–176, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46329.