Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization
Date
2013-12-01
Author
KALELİ, Murat
ÇOLAKOĞLU, TAHİR
Parlak, Mehmet
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
215
views
0
downloads
Cite This
In this study highly stoichiometric and monophase AgInSe2 thin films were prepared by selenization of Ag-InSe precursors and the effect of the annealing temperature on the structural, electrical and optical properties have been investigated. The Se incorporation during selenization process as a function of temperature and the compositions of the samples were determined by energy dispersive X-ray analysis (EDAX). As prepared and selenized films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall effect and photoresponse measurements at room temperature. XRD analysis depicted that the crystal structure of AgInSe2 film was monophase with preferred orientation along the (1 1 2) direction and the lattice parameters a= 6.09, b= 6.09 and c= 11.67 angstrom. The structural evolution was clearly diagnosed by the increase of film thickness during selenization process. It was observed from SEM measurements that the average values of grain size ranging from 0.5 to 4 mu m on the surface of AgInSe2 thin films by increasing selenization temperature from 300 to 450 degrees C. Room temperature conductivity and carrier concentrations of selenized samples determined by means of Hall measurements were found in the range of 0.03-0.88 (Omega-cm)(-1) and 1.35 x 10(15)-7.09 x 10(18) (cm(-1)), respectively. The band gaps of these samples were investigated by spectral photoresponse measurement under light bias in the range of 1.05-2.10 eV. The two stage selenization process is introduced as an applicable approach to fabricate pure monophase AgInSe2 thin films for the usage in thin-film solar cell applications.
Subject Keywords
Surfaces, Coatings and Films
URI
https://hdl.handle.net/11511/46329
Journal
APPLIED SURFACE SCIENCE
DOI
https://doi.org/10.1016/j.apsusc.2013.09.043
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique
Colakoglu, T.; Parlak, Mehmet (Elsevier BV, 2008-01-15)
The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag3In5Se9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 degrees C transformed from the amorphous to polycrystalline structure. The crystallinity of ...
Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2011-04-15)
Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealin...
PREPARATION AND CHARACTERIZATION OF PERLITE-FILLED HIGH-DENSITY POLYETHYLENES .2. THERMAL AND FLOW PROPERTIES
AKINOKTEM, G; TINCER, T (Wiley, 1994-11-21)
Thermal and flow properties of perlite-filled high-density polyethylenes (HDPE), studied in the first part of the paper, are discussed. Maximum peak temperatures of endotherms (T-mp) and the corresponding relative peak heights were examined by differential scanning calorimetry (DSC). The data obtained from a Brabender torque rheometer were evaluated to find the melt viscosities at low shear rate during preparation of perlite-HDPE composites. The filler concentration, types of HDPEs, and the use of gamma-APS...
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures
ALTINDAL, ŞEMSETTİN; Kanbur, H.; Yildiz, D. E.; Parlak, Mehmet (Elsevier BV, 2007-03-30)
The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height Phi(B0)(I-V), ideality factor (n) and series resistance (R-s) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the Phi(B0)(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperatur...
Preparation and characterization of ultrahigh molecular weight polyethylene and polyisoprene solvent-cast blend films
Akinay, AE; Tincer, T (Wiley, 1998-02-28)
This study covers the preparation of noncrosslinked and crosslinked solvent-cast blend films of ultrahigh molecular weight polyethylene (UHMWPE) and polyisoprene rubber (PIR) and their mechanical, thermal, IR spectroscopic, and morphological characterizations. Solvent-cast films of polymer blends with 0, 10, 20, 35, 50, and 65% PIR composition were prepared by vigorous stirring from a hot decalin solution. The films were crosslinked chemically by using acetophenone as a crosslinking agent under UV radiation...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. KALELİ, T. ÇOLAKOĞLU, and M. Parlak, “Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization,”
APPLIED SURFACE SCIENCE
, pp. 171–176, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46329.