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Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors
Date
2004-03-01
Author
Aslan, B
Turan, Raşit
Liu, HC
Baribeau, JM
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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We study the mechanisms of photocurrent generation in the SiGe/Si heterojunction internal photoemission (HIP) infrared photodetectors and present a qualitative model. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. The device presented here allows us to tune the cut-off wavelength between 28.3 mum and 17.8 mum by changing the potential difference across the device.
Subject Keywords
Electrical and Electronic Engineering
,
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/35409
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
DOI
https://doi.org/10.1088/0268-1242/19/3/018
Collections
Department of Physics, Article