Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

Date

2004-03-01

Author

Aslan, B
Turan, Raşit
Liu, HC
Baribeau, JM

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We study the mechanisms of photocurrent generation in the SiGe/Si heterojunction internal photoemission (HIP) infrared photodetectors and present a qualitative model. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. The device presented here allows us to tune the cut-off wavelength between 28.3 mum and 17.8 mum by changing the potential difference across the device.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/35409

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/19/3/018

Collections

Department of Physics, Article

Citation Formats

B. Aslan, R. Turan, H. Liu, and J. Baribeau, “Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 19, no. 3, pp. 399–403, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35409.