Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

2004-03-01
Aslan, B
Turan, Raşit
Liu, HC
Baribeau, JM
We study the mechanisms of photocurrent generation in the SiGe/Si heterojunction internal photoemission (HIP) infrared photodetectors and present a qualitative model. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. The device presented here allows us to tune the cut-off wavelength between 28.3 mum and 17.8 mum by changing the potential difference across the device.

Citation Formats
B. Aslan, R. Turan, H. Liu, and J. Baribeau, “Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 19, no. 3, pp. 399–403, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35409.