Large-format voltage-tunable dual-color midwavelength infrared quantum-well infrared photodetector focal plane array

Date

2008-05-01

Author

Kaldirim, M.
Eker, S. U.
Arslan, Y.
Tümkaya, Umman
Beşikci, Cengiz

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

242
views

0
downloads

We report a large-format (640 x 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mu m) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mu m (color 1) to 4.7 mu m (color 2) as the bias is increased within the limit applicable by commercial read-out integrated circuits. The operability of the FPA is similar to 99.5% with noise equivalent temperature differences of similar to 60 and 30 mK (f/1.5) in color modes 1 and 2, respectively. To our knowledge, this is the first large-format voltage-tunable dual-color QWIP FPA reported for midwavelength thermal imaging.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/43958

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

DOI

https://doi.org/10.1109/lpt.2008.920026

Collections

Department of Basic English, Article

Suggestions

OpenMETU
Core

Large-format voltage-tunable dual-band quantum-well infrared photodetector focal plane array for third-generation thermal imagers Eker, S. U.; Kaldirim, M.; Arslan, Y.; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2008-10-01) We report a large-format (640 x 512) voltage-tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mu m as the bias is increase...
Large format AlInAs-InGaAs quantum-well infrared photodetector focal plane array for midwavelength infrared thermal imaging Ozer, S.; Tümkaya, Umman; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2007-09-01) We report the first large format (640 x 512) AlInAs-InGaAs quantum-well infrared photodetector (QWIP) focal plane array (FPA), and investigate the characteristics of AlInAs-InGaAs QWIPs both at pixel and FPA level. The measurements on the detectors fabricated with molecular beam epitaxy grown epilayer structure including 30 InGaAs quantum wells (26 A thick, N-D = 2 x 10(18) cm(-3)) yielded very promising characteristics. The detectors with lambda(p) = 4.2 mu m and Delta lambda/lambda(p) = 25% displayed a ba...
High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01) We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01) We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
Fabrication of 15-mu m Pitch 640 x 512 InAs/GaSb Type-II Superlattice Focal Plane Arrays Oguz, Fikri; Arslan, Yetkin; Ulker, Erkin; Bek, Alpan; Ozbay, Ekmel (Institute of Electrical and Electronics Engineers (IEEE), 2019-08-01) We present the fabrication of large format 640 x 512, 15-mu m pitch, mid-wave infrared region (MWIR) InAs/GaSb type-II superlattice (T2SL) focal plane array (FPA). In this report, the details of device design and fabrication processes are withheld adhering to the common practice of most of the manufactures and developers because of the strategic importance; however, information about fabrication processes of T2SLs FPA is presented to a certain extent. Comparison of etching techniques, passivation materials ...

Citation Formats

M. Kaldirim, S. U. Eker, Y. Arslan, U. Tümkaya, and C. Beşikci, “Large-format voltage-tunable dual-color midwavelength infrared quantum-well infrared photodetector focal plane array,” IEEE PHOTONICS TECHNOLOGY LETTERS, pp. 709–711, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43958.