High Power K-band GaN on SiC CPW Monolithic Power Amplifier

Date

2014-10-07

Author

Cengiz, Omer
ŞEN, ÖZLEM
ÖZBAY, Ekmel

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This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 mu m HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.

Subject Keywords

AlGaN/GaN, HEMTs, MMIC power amplifier, Radiation, Space

URI

https://hdl.handle.net/11511/66996

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Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

O. Cengiz, Ö. ŞEN, and E. ÖZBAY, “High Power K-band GaN on SiC CPW Monolithic Power Amplifier,” 2014, p. 548, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66996.