A High Linearity Wide Bandwidth GSM/WCDMA/LTE Base Station LNA MMIC with Ultra Low Noise Figure

Date

2018-11-02

Author

Memioglu, Onur
Gundel, Adnan

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This paper presents a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent noise figure. The amplifier topology is compromised of a single-stage cascode topology with inductive source degeneration of common-source device. This amplifier topology seems an attractive choice for applications requiring wide bandwidth, high gain, and high linearity. The design targets 700-900 MHz, 1700-2200 MHz, and 2500-2800 MHz frequency bands for GSM/WCDMA/LTE base station receiver applications. A single-stage amplifier is implemented in a high performance 0.25um InGaAs E/D-mode pHEMT technology and demonstrates a high gain and an excellent bandwidth along with a high-linearity. Additionally, an excellent noise performance is achieved demonstrating = +32.0 dBm while requiring only 45 mA from a +5V supply.

Subject Keywords

Low-noise amplifier (LNA), High linearity, Wireless infrastructure, Pseudomorphic high electron mobility transistor (pHEMT), Monolithic, Microwave integrated circuit (MMIC)

URI

https://hdl.handle.net/11511/64976

Conference Name

18th Mediterranean Microwave Symposium (MMS)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

O. Memioglu and A. Gundel, “A High Linearity Wide Bandwidth GSM/WCDMA/LTE Base Station LNA MMIC with Ultra Low Noise Figure,” Istanbul, Turkey, 2018, p. 198, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/64976.