Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications
Date
2019-06-01
Author
Terlemezoğlu, Makbule
Dogru, C.
Gullu, H. H.
Çiftpınar, Emine Hande
Parlak, Mehmet
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
190
views
0
downloads
Cite This
The focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au was entirely fabricated by totally vacuum-based process. CZTSSe absorber layers were grown by RF magnetron sputtering technique using stacked layer procedure. SnS, CuSe and ZnSe solid targets were used as precursors and no additional step like the selenization process was applied. The structural and morphological properties of deposited CZTSSe layers were analyzed using X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. The optical and electrical properties of the CZTSSe thin films were investigated by UV-Vis spectroscopy, Hall-Effect and photoconductivity measurements. In addition, the device performance of the fabricated superstrate solar cell was examined.
Subject Keywords
Electrical and Electronic Engineering
,
Atomic and Molecular Physics, and Optics
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/37162
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
DOI
https://doi.org/10.1007/s10854-019-01477-9
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Indium rich InGaN solar cells grown by MOCVD
Cakmak, H.; Arslan, Engin; Rudzinski, M.; Demirel, P.; Ünalan, Hüsnü Emrah; Strupinski, W.; Turan, Raşit; ÖZTÜRK, MEHMET AKİF; ÖZBAY, Ekmel (Springer Science and Business Media LLC, 2014-08-01)
This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from ...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices
Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01)
In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Metal mesh filters based on Ti, ITO and Cu thin films for terahertz waves
Demirhan, Y.; Alaboz, H.; ÖZYÜZER, LÜTFİ; Nebioglu, M. A.; Takan, T.; Altan, Hakan; Sabah, C. (Springer Science and Business Media LLC, 2016-02-01)
In this study, we have investigated the spectral performance of resonant terahertz (THz) bandpass filters which were produced from thin films with a metal-mesh shape. The aforementioned filters were fabricated from titanium, copper and indium tin oxide thin films on fused silica substrates by UV lithography with an array of cross-shaped apertures. Since the mesh period, cross-arm length and its width specify the spectral characteristics of the filters, we were able to reveal the performance of these filters...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode
Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01)
The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Terlemezoğlu, C. Dogru, H. H. Gullu, E. H. Çiftpınar, and M. Parlak, “CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications,”
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, pp. 11301–11306, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37162.