Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements

Date

2009-01-01

Author

Goksen, K.
Hasanlı, Nızamı

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Thermally stimulated current (TSC) measurements were carried out on as-grown n-Ga4Se3S layered crystals in the temperature range 10-300 K. The experimental data were analysed by using different heating rates, initial rise, curve fitting and isothermal decay methods. The results of the analysis showed good agreement with each other. The measurements revealed the presence of one trapping level with activation energy of 23 meV. The corresponding capture cross-section and concentration of traps were found to be 2.2 10-23 cm2 and 2.9 1011 cm-3, respectively. TSC experiments showed the presence of an exponential distribution of electron-trapping states in Ga4Se3S crystal. The variation of one order of magnitude in the trap density for every 34 meV was obtained.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/37414

Journal

PHILOSOPHICAL MAGAZINE

DOI

https://doi.org/10.1080/14786430802660423

Collections

Department of Physics, Article

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Citation Formats

K. Goksen and N. Hasanlı, “Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements,” PHILOSOPHICAL MAGAZINE, pp. 435–447, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37414.