Low-temperature thermoluminescence study of GaSe: Mn layered single crystals

Delice, S.
Hasanlı, Nızamı
Mangan doped GaSe single crystals have been studied by thermoluminescence measurements performed with various heating rates between 0.4 and 1.0 K/s in the temperature range of 10-300 K. Thermoluminescence spectra exhibited four distinguishable peaks having maximum temperatures at 47, 102, 139 and 191 K revealing the existence of trapping levels in the crystals. Curve fitting and initial rise methods were applied to observed peaks to determine the activation energies of four trapping levels. Capture cross-sections of each level were also evaluated using the obtained energy values. Moreover, heating rate dependencies of the obtained peaks were investigated. It was shown that increase in the heating rate resulted in the decrease in thermoluminescence intensity and shift of the peak maximum temperatures to higher values. Discrete, single trap behaviour was established for acceptor level related with the peak at 191 K by analysing the sequentially obtained peaks with different stopping temperatures between 15 and 65 K.


Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements
Goksen, K.; Hasanlı, Nızamı (Informa UK Limited, 2009-01-01)
Thermally stimulated current (TSC) measurements were carried out on as-grown n-Ga4Se3S layered crystals in the temperature range 10-300 K. The experimental data were analysed by using different heating rates, initial rise, curve fitting and isothermal decay methods. The results of the analysis showed good agreement with each other. The measurements revealed the presence of one trapping level with activation energy of 23 meV. The corresponding capture cross-section and concentration of traps were found to be...
Defect luminescence in undoped p-type GaSe
Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01)
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals
Goksen, K.; Hasanlı, Nızamı (IOP Publishing, 2007-11-14)
Photoluminescence (PL) spectra of Tl4InGa3S8 layered single crystals grown by the Bridgman method have been studied in the 550-710 nm wavelength and 80 300 K temperature ranges with below bandgap excitation (lambda(exc) = 532 nm), and in the 420-600 nm wavelength and 30-300 K temperature ranges with above bandgap excitation (lambda(exc) = 325 nm). The broad emission bands centered at 580 nm (2.14 eV) and 496 nm (2.49 eV) were observed at T = 80 and 30 K for below and above bandgap excitation processes, resp...
YILDIRIM, TACETTİN; Nasser, H. A.; Hasanlı, Nızamı (World Scientific Pub Co Pte Lt, 2010-06-10)
We have carried out thermally stimulated current (TSC) measurements on as-grown Tl2Ga2S3Se layered single crystals in the temperature range 10-60 K with different heating rates of 0.6-1.5 K s(1). The data were analyzed by curve fitting, initial rise, and peak shape methods. The results were in good agreement with each other. Experimental evidence was obtained for trapping center in Tl2Ga2S3Se crystal with activation energy of 11 meV. The capture cross section and concentration of the traps were found to be ...
Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals
Hasanlı, Nızamı (Wiley, 2002-01-01)
Raman scattering has been used to study the vibrational spectra of GaSexS1-x layered mixed crystals at 10 K. We report the Frequency dependencies of different modes on composition x, with particular emphasis on A(1)('(2)) (A(1g)(1)) and A(1)('(4)) (A(1g)(2)) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.
Citation Formats
S. Delice and N. Hasanlı, “Low-temperature thermoluminescence study of GaSe: Mn layered single crystals,” PHILOSOPHICAL MAGAZINE, pp. 112–121, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40195.