Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Açık Bilim Politikası
Açık Bilim Politikası
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Study of the optical and photoelectrical properties of TlGaSeS layered single crystals
Date
2017-06-01
Author
Delice, S.
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
3
views
0
downloads
Transmission spectra (7) of TIGaSeS crystals in the photon energy (hv) range 1.38-2.38 eV are used to determine the energy gap. The indirect band gap of 2.30 eV was established employing the photon energy dependence of the first derivative dT/d(hv) and the photon energy dependence of absorption coefficient. In order to obtain information about the defect states in the energy gap of TlGaSeS crystals, photoconductivity (PC) measurements are performed in the 140-300 K range. Photoconductivity spectra in the photon energy range of 1.77-3.10 eV show two peaks related to intrinsic and extrinsic excitations. It was revealed that the first peak shifts slightly towards the low energy side with increasing temperature, whereas the second one shifts more significantly to the high energy range. It was assumed that for latter peak the deviating PC originates from the distributed energy levels in the band gap where the photoelectrons arise or where they go.
Subject Keywords
Mechanical Engineering
,
General Materials Science
,
Mechanics of Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/38097
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI
https://doi.org/10.1016/j.mssp.2017.02.005
Collections
Department of Physics, Article