Effect of Cd-doping level on the electrical, structural and photoconductivity properties of GaSe thin films

Colakoglu, T
Parlak, Mehmet
GaSe thin films were deposited by thermal evaporation technique with and without Cd doping. X-ray diffraction analysis showed that the crystallinity of doped and undoped films increases in (1014) preferred orientation direction upon annealing. Addition of cadmium dopant with excess selenium in the GaSe structure gives rise to the possibility for the existence of a CdSe phase in the highly Cd-doped samples. The room temperature conductivity and mobility values of the samples were found to be lying in between 1.3 x 10(1) - 3.4 x 10(2) (Omega Cm)(-1), (1.2-1.5) X 10(-6) (Omega cm)(-1) and 5.9-20.9 (cm(2)/Vs) for doped and undoped films, respectively. Dominant conduction mechanisms in doped films were determined to be thermionic emission in the high temperature region (250-400 K), tunneling in the range 160-250 K and variable range hopping mechanism between 100 and 150 K. For undoped films, thermionic emission was the dominant conduction mechanism above 250 K. Photocurrent-illumination intensity dependences indicated that the power exponent of the illumination intensity with values n > 1 implied that two recombination centers exist in the studied samples. (c) 2005 Elsevier B.V All rights reserved.


Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
AYGÜN ÖZYÜZER, GÜLNUR; Cantas, Ayten; Simsek, Yilmaz; Turan, Raşit (Elsevier BV, 2011-06-30)
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. Th...
Anisotropic behaviors in polycrystalline Cd-doped GaSe thin films
Colakoglu, T.; Parlak, Mehmet (Springer Science and Business Media LLC, 2006-12-01)
GaSe thin films were deposited by thermal evaporation technique with Cd doping. X-ray diffraction analysis showed that Cd-doped films have polycrystalline structure with the preferred orientation along ( 008) direction. Temperature dependent electrical conductivity measurements were carried out in the temperature range of 100 - 400 K along perpendicular and parallel directions to the growth direction for the films exhibiting p-type conduction determined by hot probe technique. The room temperature conductiv...
Stability and degradation of plasma deposited boron nitride thin films in ambient atmosphere
Anutgan, Tamila Aliyeva; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2009-11-02)
Boron nitride (BN) thin films were deposited at 296 K, 398 K, 523 K and 623 K by low power radio frequency plasma enhanced chemical vapor deposition with nitrogen (N-2.) and hydrogen diluted diborane (15% B2H6 in H-2) source gases. Fourier transform infrared and UV-visible spectroscopies were used to investigate the stability and degradation of BN films under ambient air conditions. The action of moisture on the films is reduced with increasing substrate temperature (T-s) to the detriment of the film growth...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure
Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21)
A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation
Sedani, Salar H.; Yasar, Ozlen F.; Karaman, Mehmet; Turan, Raşit (Elsevier BV, 2020-01-31)
In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing ...
Citation Formats
T. Colakoglu and M. Parlak, “Effect of Cd-doping level on the electrical, structural and photoconductivity properties of GaSe thin films,” THIN SOLID FILMS, pp. 52–60, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38389.